Interface Effects in Tunneling Magnetoresistive Systems

  • Branko Stahl
  • Horst Hahn
  • Holger Schmitt
  • Mohammad Ghafari
  • Sarbari Bhattacharya
Part of the Lecture Notes in Physics book series (LNP, volume 593)


In tunneling magneto resistance (TMR) devices the electronic and magnetic properties of the interfaces between the ferromagnetic metals and the insulating spacer layer influence the effective scattering potential for the conduction electrons. As this is especially relevant for structural and magnetic defects and inhomogeneities in the interface region, a non-destructive chemical, magnetic and electronic characterization with a sub-monolayer sensitivity is of importance.

In the present work, Mössbauer spectroscopy as a nuclear probe method was used to study the oxidation of the Fe-Al interface in an ultra high vacuum (UHV) system under successive oxidation steps. The formation of Fe-Al spinel and Fe oxide phases as well as a smoothening of the metal-insulator interface after annealing at around 230°C are identified. After a first pronounced reaction, the oxidation is observed to occur in constant amounts though the partial pressure and the time intervals varied significantly in the successive oxidation steps.


High Resolution Transmission Electron Microscopy Isomer Shift Ultra High Vacuum Electronic Band Structure Interface Zone 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • Branko Stahl
    • 1
    • 2
  • Horst Hahn
    • 1
  • Holger Schmitt
    • 1
  • Mohammad Ghafari
    • 1
  • Sarbari Bhattacharya
    • 1
  1. 1.Fachbereich Material- und GeowissenschaftenTU DarmstadtDarmstadtGermany
  2. 2.Institut für NanotechnologieForschungszentrum KarlsruheKarlsruheGermany

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