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In0.6Ga0.4As/GaAs(001) SK Layers

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Transmission Electron Microscopy of Semiconductor Nanostructures: Analysis of Composition and Strain State

Part of the book series: Springer Tracts in Modern Physics ((STMP,volume 182))

Abstract

In this chapter, we report a detailed structural and chemical study of buried and free-standing In0.6Ga0.4As SK islands [1]. The layers were grown by MBE on GaAs(001) substrates. We investigated two different types of samples, with nominal In0.6Ga0.4As layer thicknesses of 1.5 and 2 nm. The growth was interrupted for 0, 60 or 180 s prior to the deposition of a 10 nm thick GaAs cap layer. The chemical morphology of the buried layers was evaluated by the CELFA method. The free-standing islands were investigted by strain state analysis combined with FE calculations. The density and size distribution of the islands were obtained by conventional plan-view TEM.

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© 2003 Springer-Verlag Berlin Heidelberg

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(2003). In0.6Ga0.4As/GaAs(001) SK Layers. In: Transmission Electron Microscopy of Semiconductor Nanostructures: Analysis of Composition and Strain State. Springer Tracts in Modern Physics, vol 182. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-36407-2_7

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  • DOI: https://doi.org/10.1007/3-540-36407-2_7

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-00414-1

  • Online ISBN: 978-3-540-36407-8

  • eBook Packages: Springer Book Archive

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