Abstract
Heterophase interfaces are boundaries, which join two material types with different physical and chemical nature. Therefore, heterophase interfaces can exhibit a large variety of geometric morphologies ranging from atomically sharp boundaries to gradient materials, in which an interface-specific phase is formed, which provides a continuous change of the structural parameters and thus reduces elastic strains and deformations. In addition, also the electronic properties of the two materials may be different, e.g. at boundaries between an electronically conducting metal and a semiconductor or an insulating material. Due to the deviations in the electronic structure, various bonding mechanisms are observed, which span the range from weakly interacting systems to boundaries with strong, directed bonding and further to reactively bonding systems which exhibit a new phase at the interface. Thus, both elastic and electronic factors may contribute to the formation of a new, often amorphous phase at the interface. Numerical simulations based on electronic structure theory are an efficient tool to distinguish and quantify these different influence factors, and massively parallel computers nowadays provide the required numerical power to tackle structurally more demanding systems. Here, this power has been exploited by the parallelisation over an optimised set of integration points, which split the solution of the Kohn-Sham equations into a set of matrix equations with equal matrix sizes. In this way, the analysis and prediction of material properties at the nanoscale has become feasible.
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References
1. R.C. Longo, V.S. Stepanyuk, W. Hegert, A. Vega, L.J. Gallego, J. Kirschner. Interface intermixing in metal heteroepitaxy on the atomic scale. Phys. Rev. B, 69:073406, 2004.
2. J.E. Houston, J.M. White, P.J. Feibelman, D.R. Hamann. Interface-state properties for strained-layer Ni adsorbed on Ru(0001). Phys. Rev. B, 38:12164, 1988.
3. R.E. Watson, M. Weinert, J.W. Davenport. Structural stabilities of layered materials: Pt-Ta. Phys. Rev. B, 35:9284, 1987.
4. H.R. Gong, B.X. Liu. Interface stability and solid-state amorphization in an immiscible Cu-Ta system. Appl. Phys. Lett., 83:4515, 2003.
5. S. Narasimham. Stress, strain, and charge transfer in Ag/Pt(111): A test of continuum elasticity theory. Phys. Rev. B, 69:045425, 2004.
6. S. Gemming, M. Schreiber. Nanoalloying in mixed AgmAun nanowires. Z. Metallkd., 94:238, 2003.
7. S. Gemming, G. Seifert, M. Schreiber. Density functional investigation of goldcoated metallic nanowires. Phys. Rev. B, 69:245410, 2004.
8. S. Gemming, M. Schreiber. Density-functional investigation of alloyed metallic nanowires. Comp. Phys. Commun., 169:57, 2005.
9. P.J. Lin-Chung, T.L. Reinecke. Antisite defect in GaAs and at the GaAs-AlAs interface. J. Vac. Sci. Technol., 19:443, 1981.
10. S. Das Sarma, A. Madhukar. Ideal vacancy induced band gap levels in lattice matched thin superlattices: The GaAs-AlAs(100) and GaSb-InAs(100) systems. J. Vac. Sci. Technol., 19:447, 1981.
11. Y. Wei, M. Razeghi. Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering. Phys. Rev. B, 69:085316, 2004.
12. A. Kley, J. Neugebauer. Atomic and electronic structure of the GaAs/ZnSe(001) interface. Phys. Rev. B, 50:8616, 1994.
13. W.R.L. Lambrecht, B. Segall. Electronic structure and bonding at SiC/AlN and SiC/BP interfaces. Phys. Rev. B, 43:7070, 1991.
14. L. Pizzagalli, G. Cicero, A. Catellani. Theoretical investigations of a highly mismatched interface: SiC/Si(001). Phys. Rev. B, 68:195302, 2003.
15. P. Cásek, S. Bouette-Russo, F. Finocchi, C. Noguera. SrTiO3(001) thin .lms on MgO(001): A theoretical study. Phys. Rev. B, 69:085411, 2004.
16. R.R. Das, Y.I. Yuzyuk, P. Bhattacharya, V. Gupta, R.S. Katiyar. Folded acoustic phonons and soft mode dynamics in BaTiO3/SrTiO3 superlattices. Phys. Rev. B, 69:132301, 2004.
17. S. Hutt, S. Köstlmeier, C. Elsässer. Density functional study of the Σ3/(111) grain boundary in strontium titanate. J. Phys.: Condens. Matter, 13:3949, 2001.
18. S. Gemming, M. Schreiber. Impurity and vacancy clustering at the Σ3(111)[1–10] grain boundary in strontium titanate. Chem. Phys., 309:3, 2005.
19. M. Sternberg, W.R.L. Lambrecht, T. Frauenheim. Molecular-dynamics study of diamond/silicon (001) interfaces with and without graphitic interface layers. Phys. Rev. B, 56:1568, 1997.
20. T. Sakurai, T. Sugano. Theory of continuously distributed trap states at Si-SiO2 interfaces. J. Appl. Phys., 52:2889, 1981.
21. D. Chen, X.L. Ma, Y.M. Wang, L. Chen. Electronic properties and bonding con.guration at theTiN/MgO(001) interface. Phys. Rev. B, 69:155401, 2004.
22. R. Puthenkovilakam, E.A. Carter, J.P. Chang. First-principles exploration of alternative gate dielectrics: Electronic structure of ZrO2/Si and ZrSiO4/Si interfaces. Phys. Rev. B, 69:155329, 2004.
23. M. Rühle, A.G. Evans. High toughness ceramics and ceramic composites. Progr. Mat. Sci., 33:85, 1989.
24. G. Willmann, N. Schikora, R.P. Pitto. Retrieval of ceramic wear couples in total hip arthroplasty. Bioceram., 15:813, 1994.
25. A.M. Freborg, B.L. Ferguson, W.J. Brindley, G.J. Petrus. Modeling oxidation induced stresses in thermal barrier coatings. Mater. Sci. Eng. A, 245:182, 1998.
26. R. Benedek, M. Minko., L.H. Yang. Adhesive energy and charge transfer for MgO/Cu heterophase interfaces. Phys. Rev. B, 54:7697, 1996.
27. A. Hors.eld, H. Fujitani. Density-functional study of the initial stage of the anneal of a thin Co .lm on Si. Phys. Rev. B, 63:235303, 2001.
28. B.D. Yu, Y. Miyamoto, O. Sugino, A. Sakai, T. Sasaki, T. Ohno. Structural and electronic properties of metal-silicide/silicon interfaces: A .rst-principles study. J. Vac. Sci. Technol. B, 19:1180, 2001.
29. B.S. Kang, S.K. Oh, H.J. Kang, K.S. Sohn. Energetics of ultrathin CoSi2 .lm on a Si(001) surface. J. Phys.: Condens. Matter, 15:67, 2003.
30. C. Rogero, C. Koitzsch, M.E. Gonzalez, P. Aebi, J. Cerda, J.A. Martin-Glago. Electronic structure and Fermi surface of two-dimensional rare-earth silicides epitaxially grown on Si(111). Phys. Rev. B, 69:045312, 2004.
31. C.R. Ashman, C.J. Först, K. Schwarz, P.E. Blöchl. First-principles calculations of strontium on Si(001). Phys. Rev. B, 69:075309, 2004.
32. S. Walter, F. Blobner, M. Krause, S. Muller, K. Heinz, U. Starke. Interface structure and stabilization of metastable B2-FeSi/Si(111) studied with lowenergy electron di.raction and density functional theory. J. Phys.: Condens. Matter, 15:5207, 2003.
33. U. Schoenberger, O.K. Andersen, M. Methfessel. Bonding at metal ceramic interfaces - Ab-initio density-functional calculations for Ti and Ag on MgO. Acta Metall. Mater., 40:S1, 1992.
34. K. Kruse, M.W. Finnis, J.S. Lin, M.C. Payne, V.Y. Milman, A. DeVita, M.J. Gillan. First-principles study of the atomistic and electronic structure of the niobium-α-alumina(0001) interface. Phil. Mag. Lett., 73:377, 1996.
35. Y. Ikuhara, Y. Sugawara, I. Tanaka, P. Pirouz. Atomic and electronic structure of V/MgO interface. Interface Science, 5:5, 1997.
36. R. Schweinfest, S. Köstlmeier, F. Ernst, C. Elsässer, T. Wagner, M.W. Finnis. Atomistic and electronic structure of Al/MgAl2O4 and Ag/MgAl2O4 interfaces. Phil. Mag. A, 81:927, 2000.
37. S. Köstlmeier, C. Elsässer. Ab-initio investigation of metal-ceramic bonding. M(001)/MgAl2O4, M=Al, Ag. Interface Science, 8:41, 2000.
38. S. Köstlmeier, C. Elsässer, B. Meyer, M.W. Finnis. Ab initio study of electronic and geometric structures of metal/ceramic heterophase boundaries. Mat. Res. Soc. Symp. Proc., 492:97, 1998.
39. S. Köstlmeier, C. Elsässer, B. Meyer, M.W. Finnis. A density-functional study of interactions at the metal-ceramic interfaces Al/MgAl2O4 and Ag/MgAl2O4. phys. stat. sol. (a), 166:417, 1998.
40. S. Köstlmeier, C. Elsässer. Density functional study of the “titanium effect” at metal/ceramic interfaces. J. Phys.: Condens. Matter, 12:1209, 2000.
41. C. Elsässer, S. Köstlmeier-Gemming. Oxidative corrosion of adhesive interlayers. Phys. Chem. Chem. Phys., 3:5140, 2001.
42. S. Köstlmeier, C. Elsässer. Oxidative corrosion of adhesive interlayers. Mat. Res. Soc. Symp. Proc., 586:M3.1, 1999.
43. V. Vitek, G. Gutekunst, J. Mayer, M. Rühle. Atomic structure of misfit dislocations in metal-ceramic interfaces. Phil. Mag. A, 71:1219, 1996.
44. J.-H. Cho, K.S. Kim, C.T. Chan, Z. Zhang. Oscillatory energetics of .at Ag .lms on MgO(001). Phys. Rev. B, 63:113408, 2001.
45. C. Klein, G. Kresse, S. Surnev, F.P. Netzer, M. Schmidt, P. Varga. Vanadium surface oxides on Pd(111): A structural analysis. Phys. Rev. B, 68:235416, 2003.
46. A. Trampert, F. Ernst, C.P. Flynn, H.F. Fischmeister and M. Rühle. Highresolution transmission electron microscopy studies of the Ag/MgO interface. Acta Metall. Mater., 40:S227, 1992.
47. A.M. Stoneham, P.W. Tasker. Metal non-metal and other interfaces — The role of image interactions. J. Phys. C, 18:L543, 1985.
48. D.M. Duffy, J.H. Harding, A.M. Stoneham. Atomistic modeling of the metaloxide interface with image interactions. Acta Metall. Mater., 40:S11, 1992.
49. D.M. Duffy, J.H. Harding, A.M. Stoneham. Atomistic modeling of metal-oxide interfaces with image interactions. Phil. Mag. A, 67:865, 1993.
50. M.W. Finnis. Metal ceramic cohesion and the image interaction. Acta Metall. Mater., 40:S25, 1992.
51. A.M. Stoneham, P.W. Tasker. Image charges and their in.uence on the growth and the nature of thin oxide-.lms. Phil. Mag. B, 55:237, 1987.
52. D.A. Muller, D.A. Shashkov, R. Benedek, L.H. Yang, J. Silcox, D.N. Seidman. Adhesive energy and charge transfer for MgO/Cu heterophase interfaces. Phys. Rev. Lett., 80:4741, 1998.
53. T. Ochs, S. Köstlmeier, C. Elsässer. Microscopic structure and bonding at the Pd/SrTiO3(001) interface. Integr. Ferroelectr., 30:251, 2001.
54. A. Zaoui. Energetic stabilities and the bonding mechanism of ZnO(0001)/Pd(111) interfaces. Phys. Rev. B, 69:115403, 2004.
55. M. Christensen, S. Dudiy, G. Wahnström. First-principles simulation of metalceramic interface adhesion: Cu/WC versus Cu/TiC. Phys. Rev. B, 65:045408, 2002.
56. M. Christensen, G. Wahnström. Co-phase penetration of WC(10–10)/ WC(10–10) grain boundaries from .rst principles. Phys. Rev. B, 67:115415, 2003.
57. J. Hartford. Interface energy and electron structure for Fe/VN. Phys. Rev. B, 61:2221, 2000.
58. E. Saiz, A.P. Tomsia, R.M. Cannon. Ridging effects on wetting and spreading of liquids on solids. Acta Mater., 46:2349, 1998.
59. J.A. Venables, G.D.T. Spiller, M. Hanbucken. Nucleation and growth of thin .lms. Rep. Prog. Phys., 47:399, 1984.
60. A.M. Stoneham, J.H. Harding. Not too big, not too small: The appropriate scale. Nature Materials, 2:65, 2003.
61. M.W. Finnis. Interatomic Forces in Condensed Matter. Oxford University Press, Oxford, 2003.
62. R.O. Jones, O. Gunnarsson. Density-functional theory. Rev. Mod. Phys., 61:689, 1989.
63. H. Eschrig. The Fundamentals of Density Functional Theory. Edition am Gutenbergplatz, Leipzig, 2003.
64. G. Onida, L. Reining, A. Rubio. Electronic excitations: density-functional versus many-body Green's-function approaches. Rev. Mod. Phys., 74:601, 2002.
65. R.M. Dreizsler, E.K.U. Gross. Density Functional Theory. Springer, Berlin, 1990.
66. R.G. Parr, W. Yang. Density-Functional Theory of Atoms and Molecules. Oxford University Press, New York, 1989.
67. P. Hohenberg, W. Kohn. Inhomogeneous electron gas. Phys. Rev., 136:B864, 1964.
68. M. Levy. Electron densities in search of Hamiltonians. Phys. Rev. A, 26:1200, 1982.
69. U. von Barth, L. Hedin. The energy density functional formalism for excited states. J. Phys. C, 5:1629, 1972.
70. N.D. Mermin. Thermal properties of the inhomogeneous electron gas. Phys. Rev., 137:A1441, 1965.
71. S.H. Vosko, L. Wilk, M. Nusair. Accurate spin-dependent electron liquid correlation energies for local spin density calculations: a critical analysis. Can. J. Phys., 58:1200, 1980.
72. O. Gunnarsson, M. Jonson, B.I. Lundqvist. Descriptions of exchange and correlation effects in inhomogeneous electron systems. Phys. Rev. B, 20:3136, 1979.
73. J.-M. Jancu, R. Scholz, F. Beltram, F. Bassani. Empirical spds tight-binding calculation for cubic semiconductors: General method and material parameters. Phys. Rev. B, 57:6493, 1998.
74. R. Scholz, J.-M. Jancu, F. Bassani. Superlattice calculation in an empirical spds* tight-binding model. Mat. Res. Soc. Symp. Proc., 491:383, 1998.
75. A. Di Carlo. Time-dependent density-functional-based tight-binding. Mat. Res. Soc. Symp. Proc., 491:391, 1998.
76. C.Z. Wang, K.M. Ho, C.T. Chan. Tight-binding molecular-dynamics study of amorphous carbon. Phys. Rev. Lett., 70:611, 1993.
77. P. Ordejón, D. Lebedenko, M. Menon. Improved nonorthogonal tight-binding Hamiltonian for molecular-dynamics simulations of silicon clusters. Phys. Rev. B, 50:5645, 1994.
78. M. Menon, K.R. Subbaswamy. Nonorthogonal tight-binding moleculardynamics scheme for silicon with improved transferability. Phys. Rev. B, 55:9231, 1997.
79. C.M. Goringe, D.R. Bowler, E. Hernandez. Tight-binding modelling of materials. Rep. Prog. Phys., 60:1447, 1997.
80. A. Di Carlo, M. Gheorghe, P. Lugli, M. Sternberg, G. Seifert, T. Frauenheim. Theoretical tools for transport in molecular nanostructures. Physica B, 314:86, 2002.
81. R. Car, M. Parrinello. Unified approach for molecular dynamics and densityfunctional theory. Phys. Rev. Lett., 55:2471, 1985.
82. D. R. Hamann, M. Schlüter, C. Chiang. Norm-conserving pseudopotentials. Phys. Rev. Lett., 43:1494, 1979.
83. G.B. Bachelet, D.R. Hamann, M. Schlüter. Pseudopotentials that work: From H to Pu. Phys. Rev. B, 26:4199, 1082.
84. J. Moreno, J.M. Soler. Optimal meshes für integrals in real- and reciprocal-space unit cells. Phys. Rev. B, 45:13891, 1992.
85. R. Schweinfest, Th. Wagner, F. Ernst. Annual Report to the VW Foundation on the Project Progress. Stuttgart, 1997.
86. R. Stadler, D. Vogtenhuber, R. Podloucky. Ab initio study of the CoSi2(111)/Si(111) interface. Phys. Rev. B, 60:17112, 1999.
87. R. Stadler, R. Podloucky. Ab initio studies of the CuSi2(100)/Si(100) interface. Phys. Rev. B, 62:2209, 2000.
88. H. Fujitani. First-principles study of the stability of the NiSi2/Si(111) interface. Phys. Rev. B, 57:8801, 1998.
89. B. Chenevier, O. Chaix-Pluchery, P. Gergaud, O. Thomas, F. La Via. Thermal expansion and stress development in the .rst stages of silicidation in Ti/Si thin .lms. J. Appl. Phys., 94:7083, 2003.
90. G. Kuri, Th. Schmidt, V. Hagen, G. Materlik, R. Wiesendanger, J. Falta. Subsurface interstitials as promoters of three-dimensional growth of Ti on Si(111): An x-ray standing wave, x-ray photoelectron spectroscopy, and atomic force microscopy investigation. J. Vac. Sci. Technol. A, 20:1997, 2002.
91. J.M. Yang, J.C. Park, D.G. Park, K.Y. Lim, S.Y. Lee, S.W. Park, Y.J. Kim. Epitaxial C49-TiSi2 phase formation on the silicon (100). J. Appl. Phys., 94:4198, 2003.
92. O.A. Fouad, M. Yamazato, H. Ichinose, M. Nagano. Titanium disilicide formation by rf plasma enhanced chemical vapor deposition and .lm properties. Appl. Surf. Sci., 206:159, 2003.
93. R. Larciprete, M. Danailov, A. Barinov, L. Gregoratti, M. Kiskinova. Thermal and pulsed laser induced surface reactions in Ti/Si(001) interfaces studied by spectromicroscopy with synchrotron radiation. J. Appl. Phys., 90:4361, 2001.
94. M.S. Alessandrino, M.G. Grimaldi, F. La Via. C49–C54 phase transition in anometric titanium disilicide nanograins. Microelec. Eng., 64:189, 2003.
95. L. Lu, M.O. Lai. Laser induced transformation of TiSi2. J. Appl. Phys., 94:4291, 2003.
96. S.L. Cheng, H.M. Lo, L.W. Cheng, S.M. Chang, L.J. Chen. Effects of stress on the interfacial reactions of metal thin .lms on (001)Si. Thin Solid Films, 424:33, 2003.
97. C.C. Tan, L. Lu, A. See, L. Chan. Effect of degree of amorphization of Si on the formation of titanium silicide. J. Appl. Phys., 91:2842, 2002.
98. M. Ekman, V. Ozolins. Electronic structure and bonding properties of titanium silicides. Phys. Rev. B, 57:4419, 1998.
99. F. Wakaya, Y. Ogi, M. Yoshida, S. Kimura, M. Takai, Y. Akasaka, K. Gamo. Cross-sectional transmission electron microscopy study of the in.uence of niobium on the formation of titanium silicide in small-feature contacts. Micr. Eng., 73:559, 2004.
100. S. Gemming, G. Seifert. Nanotube bundles from calcium disilicide - a DFT study. Phys. Rev. B, 68:075416-1–7, 2003.
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Gemming, S., Enyashin, A., Schreiber, M. (2006). Amorphisation at Heterophase Interfaces. In: Hoffmann, K.H., Meyer, A. (eds) Parallel Algorithms and Cluster Computing. Lecture Notes in Computational Science and Engineering, vol 52. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-33541-2_13
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