Abstract
A special FIB-Ar ion milling method is applied, which utilizes a newly designed Cu grid with a thin metal foil for FIB micro-sampling, in order to remove FIB-damaged layers of site-specific regions in III-V semiconductor materials, including GaN, GaAs, AlGaAs, InP and InGaAs. It allows drastic reduction of the FIB-damaged layers to enable observation of clear HRTEM images. Based on cross-sectional TEM observations, EDS and AES analyses, it is found that structural and compositional properties of each damaged layer show very different features.
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© 2005 Springer-Verlag Berlin Heidelberg
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Tanabe, K., Matsuda, T., Sasaki, H., Iwase, F. (2005). TEM specimen preparation technique for III–V semiconductor devices by using a novel FIB-Ar ion milling method. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_89
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DOI: https://doi.org/10.1007/3-540-31915-8_89
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
Online ISBN: 978-3-540-31915-3
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