Abstract
A method is proposed for the three dimensional physical failure analysis of electronic devices. A micro-sampling technique was employed for extraction of a piece of sample from a defective cell. The extracted sample was shaped into a pillar and mounted on the tip of a needled specimen stub. Physical failure analysis of the sample was then performed using a dedicated focused ion beam (FIB) — scanning transmission electron microscope (STEM) system. This technique was applied to the physical failure analysis of an inadequately insulated gate oxide layer in an electronic device.
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References
Kamino T, Yaguchi T, Kuroda Y, Hashimoto T, Ohnishi T, Ishitani T, Umemura K and Asayama K 2002 Proc. Microsc. Microanal. 8, 48
Ohnishi T, Koike H, Ishitani T, Tomimatsu S, Umemura K and Kamino T 1999 Proc. 25th Int. Symp. For Testing and Failure Analysis, 449
Yaguchi T, Kamino T Ohnishi T, Hashimoto T, Umemura K and Asayama K 2003 Proc. 29th Int. Symp. For Testing and Failure Analysis, 282
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© 2005 Springer-Verlag Berlin Heidelberg
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Kamino, T., Yaguchi, T., Konno, M., Hashimoto, T., Ohnishi, T., Umemura, K. (2005). A method for 3D failure analysis using a dedicated FIB-STEM system. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_87
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DOI: https://doi.org/10.1007/3-540-31915-8_87
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
Online ISBN: 978-3-540-31915-3
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