Abstract
As well the universal usage for SEM and TEM cross-sectional sample preparation, modern FIBs have other applications which make them extremely suitable for semiconductor device analysis. Foremost amongst these is the ability to modify existing IC circuitry. Particular attention will be paid to circuit modification of the latest generation of devices where the use of copper interconnects requires the use of different gas chemistries in the FIB and where the complexity of the device itself often only permits modifications to be performed through the backside of the chip.
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© 2005 Springer-Verlag Berlin Heidelberg
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Donnet, D.M., Roberts, H. (2005). FIB applications for semiconductor device failure analysis. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_86
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DOI: https://doi.org/10.1007/3-540-31915-8_86
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
Online ISBN: 978-3-540-31915-3
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