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Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN

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Microscopy of Semiconducting Materials

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 107))

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Abstract

Transmission electron microscopy has been applied to study Ti and Al/Ti contacts on GaN and AlGaN/GaN as a function of annealing temperature. This has lead to a profound understanding of the role of Al, both in the contact formation on n-GaN and on AlGaN/GaN. Al in the AlGaN decreases the N-extraction by Ti out of the nitride, because of the strong Al-N bond. Al in the metal bilayer also reduces the N-extraction by Ti due to a preferential alloy mixing.

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Author information

Authors and Affiliations

  1. EMAT, University of Antwerp, Groenenborgerlaan 171, 2020, Antwerpen, Belgium

    B Van Daele & G Van Tendeloo

  2. IMEC, Kapeldreef 75, 3001, Leuven, Belgium

    W Ruythooren, J Derluyn, M R Leys & M Germain

Authors
  1. B Van Daele
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  2. G Van Tendeloo
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  3. W Ruythooren
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  4. J Derluyn
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  5. M R Leys
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  6. M Germain
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Editor information

Editors and Affiliations

  1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK

    A. G. Cullis

  2. Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK

    J. L. Hutchison

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© 2005 Springer-Verlag Berlin Heidelberg

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Van Daele, B., Van Tendeloo, G., Ruythooren, W., Derluyn, J., Leys, M.R., Germain, M. (2005). Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_83

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