Abstract
The technological processes of subsequent implantation of fluorine and boron ions are investigated by means of transmission electron microscopy. The quality of amorphous layers, formed by fluorine implants of different energies is determined. The nature and depth occurrence of residual defects after furnace annealing are investigated and the crystal quality of piezoresistors, obtained by boron implantation, with and without fluorine pre-amorphization, is compared.
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Wzorek M, Kajcki J, Pluska M, Ratajczak J, Jaroszewicz B, Domanski K and Grabiec P, to be published
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Wzorek, M., Kątcki, J., Ratajczak, J., Jaroszewicz, B., Domański, K., Grabiec, P. (2005). TEM study of silicon implanted with fluorine and boron applied to piezoresistor manufacturing. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_81
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DOI: https://doi.org/10.1007/3-540-31915-8_81
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
Online ISBN: 978-3-540-31915-3
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