Abstract
By conventional TEM it was shown that the nanocomposite fabricated on the basis of an oxidized porous silicon layer consisted of silicon oxide with crystalline silicon inclusions of two kinds connected with each other: rounded particles with sizes in a range 5-30 nm and continuous 3D network of nanowires with thicknesses of about several nanometers. The current-voltage characteristics (CVC) of the nanocomposite were measured for different modes of charge carrier excitation. The densities of thermally- and photo-activated traps and the effective mobility of charge carriers were estimated.
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Sorokin, L.M., Sokolov, V.I., Kalmykov, A.E., Grigoryev, L.V. (2005). Structural and electrophysical properties of a nanocomposite based upon the Si-SiO2 system. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_70
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DOI: https://doi.org/10.1007/3-540-31915-8_70
Publisher Name: Springer, Berlin, Heidelberg
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