Origins and reduction of threading dislocations in GaN epitaxial layers

  • S Mahajan
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 107)


We examined, using AFM and TEM, GaN nucleation layers (NLs) and early stages of high temperature (HT) GaN overgrowth on annealed NLs and HT GaN layers grown for different durations. We demonstrate that threading dislocations (TDs) do not form at the coalescence of HT GaN growths. We identify two sources of TDs: highly defective regions in NLs and point defects present in HT GaN. We developed a novel approach for reducing TDs. We refer to it as in situ epitaxial layer overgrowth. This process entails depositing in situ a very thin silicon nitride layer on as-deposited NLs, followed by HT growth. The density of TDs is reduced to 2×108 cm−2. We ascertain the origin of the observed reduction.


Silicon Nitride Mosaic Structure High Temperature Growth Mask Layer Silicon Nitride Layer 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2005

Authors and Affiliations

  • S Mahajan
    • 1
  1. 1.Department of Chemical & Materials EngineeringArizona State UniversityTempe

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