Abstract
In this paper, structures of InAs/GaAs and SiGe/Si rolled-up nanotubes (RUNTs) are characterized by using high-resolution transmission electron microscopy (HRTEM) and spatially-resolved electron energy loss spectroscopy. Free-standing RUNTs as well as their cross-sections are investigated. It is found that the walls of the nanotubes are mainly crystalline, and are composed of alternating crystalline and oxide containing noncrystalline layers. Defects form in some nanotubes, where the rolling involves a misorientation.
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© 2005 Springer-Verlag Berlin Heidelberg
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Jin-Phillipp, N.Y. et al. (2005). Structure of rolled-up semiconductor nanotubes. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_66
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DOI: https://doi.org/10.1007/3-540-31915-8_66
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
Online ISBN: 978-3-540-31915-3
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