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Quantitative measurements of the inhomogeneous strain field of stacked self-assembled InAs/InP(001) quantum wires by the Peak Finding Method

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Book cover Microscopy of Semiconducting Materials

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 107))

Abstract

Stacks of InAs self-assembled quantum wires (QWr) grown by solid source molecular beam epitaxy on InP (001) substrates have been studied by both transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). Samples with an InP spacer layer thickness ≤ 10 nm are shown to exhibit stacked quantum wires well arranged along directions close to [001]. The analysis of some HRTEM images by the Peak Finding Method demonstrates the existence of an inhomogeneous strain field distribution throughout the InP spacer layers. The growth front of the InP spacer layers shows the lowest stress for the growth of further InAs wires on the areas located on top of each buried wire. The InAs wires are preferentially formed on these lowest stress surface areas.

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Author information

Authors and Affiliations

  1. Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cádiz, Apdo. 40, 11510, Puerto Real, Cádiz, Spain

    T Ben, S I Molina & R García

  2. Instituto de Microelectrónica de Madrid (IMM-CNM-CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid, Spain

    D Fuster, M U González, L González & Y González

  3. Institute of Physics PAS, Al. Lotników 32/46, 02-688, Warsaw, Poland

    S Kret

Authors
  1. T Ben
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  2. S I Molina
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  3. R García
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  4. D Fuster
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  5. M U González
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  6. L González
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  7. Y González
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  8. S Kret
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Editor information

Editors and Affiliations

  1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK

    A. G. Cullis

  2. Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK

    J. L. Hutchison

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© 2005 Springer-Verlag Berlin Heidelberg

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Ben, T. et al. (2005). Quantitative measurements of the inhomogeneous strain field of stacked self-assembled InAs/InP(001) quantum wires by the Peak Finding Method. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_63

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