Abstract
The analysis by transmission electron microscopy of GaInNAs/GaAs(001) quantum wells grown at different temperatures in the range 375–420 °C is reported. Our results with the 220BF reflection have shown the existence of periodic strain contrasts in all the wells, associated with composition fluctuations in the alloy. These contrasts are more pronounced with increasing growth temperature, revealing a kinetic limitation for the formation of the phase separation. With the theoretical equation proposed by Cahn and the amplitude of the intensity profiles taken from 220BF micrographs, the activation energy for surface diffusion in GaInNAs is calculated.
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© 2005 Springer-Verlag Berlin Heidelberg
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Herrera, M. et al. (2005). Activation energy for surface diffusion in GaInNAs quantum wells. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_58
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DOI: https://doi.org/10.1007/3-540-31915-8_58
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
Online ISBN: 978-3-540-31915-3
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