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Microscopy of Semiconducting Materials pp 271–274Cite as

Chemical composition and strain distribution of InAs/GaAs(001) stacked quantum rings

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Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 107))

Abstract

The strain and composition distributions of InAs/GaAs(001) stacked self-assembled quantum rings (QRs) grown by MBE have been analyzed. Transmission electron microscopy (TEM) images revealed a high degree of vertical arrangement of quantum rings for samples spaced by a GaAs spacer layer thickness ts < 6 nm. The peak finding method was applied to high resolution transmission electron micrographs in order to plot strain maps, revealing that the higher strained areas were in the ring core and close to it. The existence of another layer with similar strain to the wetting layer was also clear from the peak finding strain analysis. The transverse compositional profiles taken from 002 DF TEM images show the existence of In-rich regions within the nano-rings and an In(Ga)As well defined layer surrounding them, which is formed during the growth process.

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Author information

Authors and Affiliations

  1. Dpto. de Ciencia de los Materiales e Ingeniería Metalúrgica y Q. I. Facultad de Ciencias, Campus Río San Pedro, Pto. Real. (Cádiz), Spain

    T Ben, A M Sánchez & S I Molina

  2. Instituto de Microelectrónica. de Madrid, CNM (CSIC). C/ Isaac Newton 8, PTM 28760-, Tres Cantos. (Madrid), Spain

    D Granados & J M García

  3. Institute of Physics PAS, Al. Lotników 32/46, 02-688, Warsaw, Poland

    S Kret

Authors
  1. T Ben
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  2. A M Sánchez
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  3. S I Molina
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  4. D Granados
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  5. J M García
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  6. S Kret
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Editor information

Editors and Affiliations

  1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK

    A. G. Cullis

  2. Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK

    J. L. Hutchison

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© 2005 Springer-Verlag Berlin Heidelberg

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Ben, T., Sánchez, A.M., Molina, S.I., Granados, D., García, J.M., Kret, S. (2005). Chemical composition and strain distribution of InAs/GaAs(001) stacked quantum rings. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_56

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