Abstract
A structural and compositional study of the effects of different thicknesses of InAlAs in the combined two-level InAlAs-InGaAs capping layer on InAs/GaAs quantum dots has been performed. Scanning transmission electron microscopy has been employed to determine the dot size and shape. Energy-loss filtered transmission electron microscopy imaging has been has been used to qualitatively determine the elemental distribution in the vicinity of quantum dots. An increase in the height of the quantum dots has been observed when the thickness of InAlAs capping layer is increased. In addition, there is evidence to suggest that the concentration of aluminium near the apex of the quantum dots is significantly reduced. Based on surface chemical potential thermodynamics, the increased height of InAs/GaAs quantum dots with increasing InAlAs capping layer thickness may be explained as a consequence of the higher indium adatom density above the capping layer and the subsequent suppression of the indium atom detachment rate from the InAs quantum dots.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Bimberg D, Grundmann M and Ledentsov N N, Quantum Dot Heterostructures 1999 (John Wiley, Chichester) and references therein
Cullis A G, Norris D J, Walther T, Migliorato M A and Hopkinson M 2002 Phys. Rev. B 66. 081305(R)
Egerton R F 1996 Electron Energy Loss Spectroscopy in the Electron Microscope (Plenum, New York)
Ledentsov N N, Shchukin V A, Grundmann M, Kirstaedter N, Böhrer J, Schmidt O, Bimberg D, Ustinov V M, Egorov A Yu, Zhukov A E, Kop’ev P S, Zaitsev S V, Gordeev N Yu, Alferov Zh I, Borovkov A I, Kosogov A O, Ruvimov S S, Werner P, Gösele U and Heydenreich J 1996 Phys. Rev. B 54, 8743
Liu H Y, Sellers I R, Hopkinson M, Mowbray D J and Skolnick M S 2003a Appl. Phys. Lett. 83, 3716
Liu H Y and Hopkinson M 2003b Appl. Phys. Lett. 82, 3644
Liu H Y, Tey C M, Sellers I R, Beanland R, Mowbray D J, Skolnick M S, Hopkinson M and Cullis A G 2005 J. Appl. Phys. in press
Mukai K, Nakata Y, Otsubo K, Sugawara M, Yokohama N and Ishikawa H 2000 Appl. Phys. Lett. 76, 3349
Songmuang R, Kiravittaya S and Schmidt O G 2003 J. Cryst. Growth 249,416
Tey C M, Liu H Y, Cullis A G, Ross I M and Hopkinson M 2005 J. Cryst. Growth 258,17
Tournie E, Zhang Y H, Pulsford N J and Ploog K 1991 J. Appl. Phys. 70, 7362
Wei Y Q, Wang S M, Ferdos F, Vukusic J, Larsson A, Zhao Q X and Sadeghi M 2002 Appl. Phys. Lett. 81,1621
Xie Q H, Chen P and Madhukar A 1994 Appl. Phys. Lett. 87. 2051
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2005 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Tey, C.M., Cullis, A.G., Liu, H.Y., Ross, I.M., Hopkinson, M. (2005). Structural analysis of the effects of a combined InAlAs-InGaAs capping layer in 1.3-μm InAs quantum dots. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_54
Download citation
DOI: https://doi.org/10.1007/3-540-31915-8_54
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
Online ISBN: 978-3-540-31915-3
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)