Abstract
The elemental distribution in InAs/GaAs quantum dots has been analysed using the d transition edges in the imaginary part of the dielectric function, ɛ2(E), obtained from the electron energy loss spectrum from a Kramers-Kronig analysis. Changes in the plasmon peak parameters have also been observed in areas of the InAs quantum dot with respect to the GaAs.
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© 2005 Springer-Verlag Berlin Heidelberg
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Sánchez, A.M., Gass, M.H., Papworth, A.J., Beanland, R., Drouot, V., Goodhew, P.J. (2005). Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_53
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DOI: https://doi.org/10.1007/3-540-31915-8_53
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
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