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In GaN-GaN quantum wells: their luminescent and nano-structural properties

  • J S Barnard
  • D M Graham
  • T M Smeeton
  • M J Kappers
  • P Dawson
  • M Godfrey
  • C J Humphreys
Conference paper
  • 539 Downloads
Part of the Springer Proceedings in Physics book series (SPPHY, volume 107)

Abstract

The luminescent and nano-structural properties of InGaN-GaN quantum wells have been investigated as a function of indium content. Photoluminescence spectra of single quantum wells show an excitonic emission mechanism that is localised on a length scale of 12–30Å. Using high-resolution STEM high-angle annular dark field imaging we have looked for nano-structural features in high-indium content multiple and single quantum wells. We find the existence of apparent well width fluctuations in the MQW sample with suggestions of indium fluctuations as well. In the single quantum well, we find a reasonably homogeneous well with no obvious signs of clustering or well width fluctuations.

Keywords

Single Quantum Indium Content Width Fluctuation Atomic Column Convergent Beam Electron Diffraction Pattern 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2005

Authors and Affiliations

  • J S Barnard
    • 3
  • D M Graham
    • 1
  • T M Smeeton
    • 2
  • M J Kappers
    • 3
  • P Dawson
    • 1
  • M Godfrey
    • 1
  • C J Humphreys
    • 3
  1. 1.School of Physics and AstronomyUniversity of ManchesterManchesterUK
  2. 2.Sharp Laboratories of EuropeOxfordUK
  3. 3.Department of Materials ScienceUniversity of CambridgeCambridgeUK

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