Abstract
The luminescent and nano-structural properties of InGaN-GaN quantum wells have been investigated as a function of indium content. Photoluminescence spectra of single quantum wells show an excitonic emission mechanism that is localised on a length scale of 12–30Å. Using high-resolution STEM high-angle annular dark field imaging we have looked for nano-structural features in high-indium content multiple and single quantum wells. We find the existence of apparent well width fluctuations in the MQW sample with suggestions of indium fluctuations as well. In the single quantum well, we find a reasonably homogeneous well with no obvious signs of clustering or well width fluctuations.
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Barnard, J.S. et al. (2005). In GaN-GaN quantum wells: their luminescent and nano-structural properties. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_5
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DOI: https://doi.org/10.1007/3-540-31915-8_5
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
Online ISBN: 978-3-540-31915-3
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