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Towards quantitative electron holography of electrostatic potentials in doped semiconductors

  • P K Somodi
  • R E Dunin-Borkowski
  • A C Twitchett
  • C H W Barnes
  • P A Midgley
Conference paper
  • 508 Downloads
Part of the Springer Proceedings in Physics book series (SPPHY, volume 107)

Abstract

Simulations of the electrostatic potential within thin Si samples containing an abrupt p-n junction have been compared with experimental measurements obtained using off-axis electron holography from samples prepared using focused ion beam milling. In order to obtain agreement between the simulated and experimental potential profiles, a layer of altered dopant concentration is introduced at the specimen surface.

Keywords

Dopant Concentration Electrostatic Potential Sample Thickness Convergent Beam Electron Diffraction Depletion Width 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2005

Authors and Affiliations

  • P K Somodi
    • 1
  • R E Dunin-Borkowski
    • 1
  • A C Twitchett
    • 1
  • C H W Barnes
    • 2
  • P A Midgley
    • 1
  1. 1.Department of Materials Science and MetallurgyUniversity of CambridgeCambridgeUK
  2. 2.Department of PhysicsUniversity of CambridgeCambridgeUK

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