Off-axis electron holography of focused ion beam milled GaAs and Si p-n junctions
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Si and GaAs p-n junctions have been characterised in the transmission electron microscope using off-axis electron holography. Focused ion beam milling was used to prepare parallel-sided membranes with thicknesses of 200–500 nm. Off-axis electron holograms were acquired at 200kV in order to assess the effect of specimen preparation on the electrostatic potentials measured across the junctions.
KeywordsConvergent Beam Electron Diffraction Electron Holography Amorphous Surface Layer Back Focal Plane Pixel Charge Couple Device
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