Interference electron microscopy of reverse-biased p-n junctions
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Electron interferometry experiments on straight reverse-biased p-n junctions have been carried out in a transmission electron microscope. The trends of the interference fringes as well as the shape of the interference region are able to give direct information about the phase variation across the junction. Agreement between theory and experiments is obtained by introducing a suitable surface density charge produced by the beam at the interface between the silicon and the native oxide. The results confirm in a more reliable way the main achievements formerly obtained through out-of-focus observations.
KeywordsExternal Field Reverse Bias Interference Fringe Surface Density Charge Dead Layer
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