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ConceptEM: a new method to quantify solute segregation to interfaces or planar defect structures by analytical TEM and applications to inversion domain boundaries in doped zinc oxide

  • T Walther
  • A Rečnik
  • N Daneu
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 107)

Abstract

Multiple scattering of electrons within the specimen degrades the spatial resolution in scanning or nano-probe transmission electron microscopy (TEM). It also reduces significantly the chemical signal from a local defect. Hence, the accuracy of analytical TEM is much lower than its sensitivity. A new technique has been developed for determining small amounts of solute atoms incorporated into well-defined planar defects in solids. The method is based on recording series of analytical spectra taken with different electron beam diameters centered above a defect which is oriented nearly edge-on. A linear least-squares fit is performed and the segregation level determined from the slope of the fitting curve. This concept of nearly concentric electron probes in analytical TEM (conceptEM) can be applied to both energy-dispersive X-ray (EDX) or electron energy-loss spectroscopy (EELS). For the study a nano-probe mode is used but no scan unit is needed. Reliability and accuracy have been modeled and applications to doped ZnO are presented.

Keywords

Analytical Transmission Electron Microscopy Solute Atom Segregation Level Dope Zinc Oxide Electron Beam Diameter 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. Daneu N, Walther T and Rečnik A 2002 Proc. 15th Int. Conf. Electron Microsc., eds R Cross, J Engelbrecht and M Witcomb (Durban, Microsc. Soc. South Africa) 3, 63Google Scholar
  2. Rečnik A Daneu N, Walther T, Mader W 2001 J. Am. Ceram. Soc. 84, 2657CrossRefGoogle Scholar
  3. Rečnik A, Daneu N, Walther T, Kawasaki M and Mader W 2002 Proc. 15th Int. Conf. Electron Microsc. 1, 531Google Scholar
  4. Walther T, Rečnik A, Daneu N 2002 Proc. 15th Int. Conf. Electron Microsc. 1, 535Google Scholar
  5. Walther T 2004 J. Microsc. 215, 191CrossRefGoogle Scholar
  6. Walther T, Daneu N, Rečnik A 2004 Interface Science 12, 267CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2005

Authors and Affiliations

  • T Walther
    • 2
  • A Rečnik
    • 1
  • N Daneu
    • 1
  1. 1.Dept. Nanostructured MaterialsJožef-Stefan-InstituteLjubljanaSlovenia
  2. 2.Center of Advanced European Studies and Research (caesar)BonnGermany

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