First stage of nucleation of GaN on (0001) sapphire

Kwon, Y B; Je, J H; Ruterana, P; Nouet, G

doi:10.1007/3-540-31915-8_4

Y B Kwon³,
J H Je³,
P Ruterana⁴ &
…
G Nouet⁴

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 107))

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Abstract

The origin of threading dislocations (TDs) in GaN epitaxial layers grown on sapphire (0001) substrate is investigated using moiré fringes from plan-view transmission electron microscopy. The studied samples are nucleation layers deposited at 540°C for times ranging from 20s to 180s. This initial stage growth gives rise to islands which are randomly rotated and relaxed with misfit dislocations. The islands that start to coalesce from 60s growth time keep this random orientation and this leads to the bending of 60° misfit dislocations in the interface plane to form a-type TDs inside low angle boundaries.

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Authors and Affiliations

Synchrotron X-ray Laboratory, Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 790-784, Korea
Y B Kwon & J H Je
SIFCOM UMR 6176 CNRS, ENSICAEN, 6 Bld Marechal Juin, 14050, Caen cedex, France
P Ruterana & G Nouet

Authors

Y B Kwon
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J H Je
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P Ruterana
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G Nouet
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Editors and Affiliations

Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK
A. G. Cullis
Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
J. L. Hutchison

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Kwon, Y.B., Je, J.H., Ruterana, P., Nouet, G. (2005). First stage of nucleation of GaN on (0001) sapphire. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_4

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DOI: https://doi.org/10.1007/3-540-31915-8_4
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
Online ISBN: 978-3-540-31915-3
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