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Aberration-corrected HREM/STEM for semiconductor research

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Microscopy of Semiconducting Materials

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 107))

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Abstract

Aberration correction leads to a substantial improvement in the resolution of transmission electron microscopes. The JEM-2200FS in Oxford (Begbroke site) is equipped with correctors for both TEM and STEM. Alignment of the TEM and STEM correctors is achieved through variations of the Zemlin tableaux. The microscope can be used to study the same or similar regions of a sample in both TEM and STEM modes.

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© 2005 Springer-Verlag Berlin Heidelberg

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Hetherington, C.J.D., Cockayne, D.J.H., Doole, R.C., Hutchison, J.L., Kirkland, A.I., Titchmarsh, J.M. (2005). Aberration-corrected HREM/STEM for semiconductor research. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_36

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