Changes in plasmon peak position in a GaAs/Tn0.2Ga0.8As structure

Beanland, R; Sánchez, A M; Papworth, A J; Gass, M H; Goodhew, P J

doi:10.1007/3-540-31915-8_33

R Beanland⁶,
A M Sánchez³,
A J Papworth⁴,
M H Gass⁵ &
…
P J Goodhew⁴

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 107))

911 Accesses

Abstract

We have investigated changes in the plasmon loss peak seen in electron energy loss spectra from a 15 nm In_0.2Ga_0.8As layer in GaAs using a VG HB601 UX FEG-STEM. We observe a relative shift in plasmon peak position which is independent of sample thickness but varies slightly with diffraction condition. We interpret this behaviour as being primarily due to changes in lattice parameter, thus giving a new technique for the quantitative measurement of strain at the nm scale. The resolution of the technique is comparable to that of annular dark field images.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution

Chapter: USD 29.95; Price excludes VAT (USA)

eBook: USD 169.00; Price excludes VAT (USA)

Softcover Book: USD 219.99; Price excludes VAT (USA)

Hardcover Book: USD 219.99; Price excludes VAT (USA)

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

References

Daniels H R, Brydson R, Brown A and Rand B 2003 Ultramicroscopy 96, 547
Article CAS Google Scholar
Ferrari A C, Libassi A, Tanner B K, Stolojan V, Yuan J Brown, L M Rodil, S E Kleinsorg B and Robertson J 2000 Phys Rev B62, 11089
Google Scholar
Kundmann M K 1988 Ph.D. Thesis, University of California at Berkeley
Google Scholar
Raether H 1980 Excitation of Plasmons and Interband Transitions by Electrons (Springer-Verlag, Berlin)
Google Scholar

Download references

Author information

Authors and Affiliations

Departamento de Ciencia de los Materiales e IM y QI, Universidad de Cádiz, Apdo 40, E-11510, Puerto Real (Cadiz), Spain
A M Sánchez
Department of Engineering, Materials Science, University of Liverpool, L69 3GH, UK
A J Papworth & P J Goodhew
Department of Materials Science and Metallurgy, Pembroke St. University of Cambridge, CB2 3QZ, UK
M H Gass
Bookham Inc, Caswell, Towcester, Northants, NN12 8EQ, UK
R Beanland

Authors

R Beanland
View author publications
You can also search for this author in PubMed Google Scholar
A M Sánchez
View author publications
You can also search for this author in PubMed Google Scholar
A J Papworth
View author publications
You can also search for this author in PubMed Google Scholar
M H Gass
View author publications
You can also search for this author in PubMed Google Scholar
P J Goodhew
View author publications
You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK
A. G. Cullis
Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
J. L. Hutchison

Rights and permissions

Reprints and permissions

Copyright information

About this paper

Cite this paper

Beanland, R., Sánchez, A.M., Papworth, A.J., Gass, M.H., Goodhew, P.J. (2005). Changes in plasmon peak position in a GaAs/Tn_0.2Ga_0.8As structure. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_33

Download citation

DOI: https://doi.org/10.1007/3-540-31915-8_33
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
Online ISBN: 978-3-540-31915-3
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)

Publish with us

Policies and ethics