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Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy

  • M W Fay
  • Y Han
  • S V Novikov
  • K W Edmonds
  • K Wang
  • B L Gallagher
  • R P Campion
  • C T Foxon
  • P D Brown
Conference paper
  • 515 Downloads
Part of the Springer Proceedings in Physics book series (SPPHY, volume 107)

Abstract

Observations of orthogonal orientations demonstrate the development of banded contrast features on inclined \( \left\{ {\bar 1\bar 1\bar 1} \right\} \) B planes for the [110] projection within micron thick samples, attributed to a compositional fluctuation in the Mn content. The relationship of Mn content and layer critical thickness for the onset of precipitate and stacking fault formation is investigated. The formation of a Mn-O layer at the surface of the samples is also observed. The growth of GaMnN/(001)GaAs heterostructures with and without AlN/GaN buffer layers is also compared. Layers without buffer layers show MnAs inclusions into the GaAs, with a reduced Mn content of the GaMnN layer significantly below the nominal composition. The use of AlN/GaN buffer layers is found to greatly reduce the density of these MnAs inclusions, retaining a higher proportion of the Mn within the epilayer.

Keywords

Buffer Layer Electron Energy Loss Spectroscopy Misfit Strain Convergent Beam Electron Diffraction GaAs Buffer Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2005

Authors and Affiliations

  • M W Fay
    • 1
  • Y Han
    • 1
  • S V Novikov
    • 1
  • K W Edmonds
    • 1
  • K Wang
    • 1
  • B L Gallagher
    • 1
  • R P Campion
    • 1
  • C T Foxon
    • 1
  • P D Brown
    • 1
  1. 1.School of Mechanical, Materials and Manufacturing Engineering and School of Physics and AstronomyUniversity of NottinghamUniversity Park, Nottingham

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