Defect generation in high In and N content GaInNAs quantum wells: unfaulting of Frank dislocation loops
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We have studied by transmission electron microscopy the defect generation in GaInNAs quantum wells when increasing the In and N contents in the range 20–35% and 1.3–2.3%, respectively. This analysis has shown the appearance of extrinsic Frank dislocation loops for In ≥ 25%, and of threading dislocations for In=35% and N ≥ 1.4%. It is proposed that the threading dislocations are formed from the unfaulting of the Frank loops. A new theoretical model for the process of unfaulting of extrinsic loops is proposed, which has allowed us to calculate the stacking fault energy in the GaInNAs alloy.
KeywordsBurger Vector Stack Fault Energy Dislocation Loop Defect Generation Misfit Dislocation
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