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Defect generation in high In and N content GaInNAs quantum wells: unfaulting of Frank dislocation loops

  • M Herrera
  • D González
  • J G Lozano
  • M Hopkinson
  • M Gutierrez
  • P Navaretti
  • H Y Liu
  • R García
Conference paper
  • 514 Downloads
Part of the Springer Proceedings in Physics book series (SPPHY, volume 107)

Abstract

We have studied by transmission electron microscopy the defect generation in GaInNAs quantum wells when increasing the In and N contents in the range 20–35% and 1.3–2.3%, respectively. This analysis has shown the appearance of extrinsic Frank dislocation loops for In ≥ 25%, and of threading dislocations for In=35% and N ≥ 1.4%. It is proposed that the threading dislocations are formed from the unfaulting of the Frank loops. A new theoretical model for the process of unfaulting of extrinsic loops is proposed, which has allowed us to calculate the stacking fault energy in the GaInNAs alloy.

Keywords

Burger Vector Stack Fault Energy Dislocation Loop Defect Generation Misfit Dislocation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. Garner F A and Gelles D S 1988 J. Nucl. Mater. 159, 286CrossRefGoogle Scholar
  2. Herrera M, González D, García R, Hopkinson M, Navaretti P, Gutiérrez M and Liu H Y Thin Solid Films, in pressGoogle Scholar
  3. Hirth J P and Lothe J 1982 Theory of dislocations, Wiley-Interscience Publications, New York.Google Scholar
  4. Kondow M, Uomi K, Niwa A, Kitatani T, Watahiki S and Yazawa Y 1996 Jpn. J. Appl. Phys. 35, 1273CrossRefGoogle Scholar
  5. Matthews J W and Blakeslee A E 1974 J. Cryst. Growth 27, 118CrossRefGoogle Scholar
  6. Montero-Ocampo C, Juarez R and Salinas Rodriguez A 2002 Metall. & Mat. Trans. 33A, 2229Google Scholar
  7. Spruytte S G, Coldren C W, Harris J S, Wamplet W, Krispin P, Ploog K and Larson M C 2001 J. Appl. Phys. 89, 4401CrossRefGoogle Scholar
  8. Takeuchi S and Suzuki K 1999 Phys. Stat. Sol. (a) 171, 99CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2005

Authors and Affiliations

  • M Herrera
    • 2
  • D González
    • 2
  • J G Lozano
    • 2
  • M Hopkinson
    • 1
  • M Gutierrez
    • 1
  • P Navaretti
    • 1
  • H Y Liu
    • 1
  • R García
    • 2
  1. 1.Department of Electronic and Electrical EngineeringUniversity of SheffieldSheffieldUK
  2. 2.Departamento de Ciencia de los Materiales e I. M. y Q. I.Universidad de CádizPuerto Real, CádizSpain

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