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Local compositional analysis of GeSi/Si nanoclusters by scanning Auger microscopy

  • G A Maximov
  • D E Nikolitchev
  • D O Filatov
Conference paper
  • 525 Downloads
Part of the Springer Proceedings in Physics book series (SPPHY, volume 107)

Abstract

The analytic potential of scanning Auger microscopy for study of the composition of semiconducting nanostructures was demonstrated. The objects of investigation were self-assembled GeSi nanoclusters grown on silicon substrates by molecular beam epitaxy. The practicability of local compositional analysis of single GeSi nanoclusters was shown. The measurement technique was developed and local depth composition profiling of nanoclusters was fulfilled with 50 nm lateral resolution. The concentration obtained by scanning Auger microscopy is in a good agreement with results calculated using photoelectric measurements.

Keywords

Molecular Beam Epitaxy Auger Spectrum Photoelectric Measurement Scan Auger Microscopy Auger Microscopy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2005

Authors and Affiliations

  • G A Maximov
    • 1
  • D E Nikolitchev
    • 1
  • D O Filatov
    • 1
  1. 1.Research and Educational Center for Physics of Solid State NanostructuresUniversity of Nizhny NovgorodNizhny NovgorodRussia

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