Local compositional analysis of GeSi/Si nanoclusters by scanning Auger microscopy

Maximov, G A; Nikolitchev, D E; Filatov, D O

doi:10.1007/3-540-31915-8_22

G A Maximov³,
D E Nikolitchev³ &
D O Filatov³

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 107))

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Abstract

The analytic potential of scanning Auger microscopy for study of the composition of semiconducting nanostructures was demonstrated. The objects of investigation were self-assembled GeSi nanoclusters grown on silicon substrates by molecular beam epitaxy. The practicability of local compositional analysis of single GeSi nanoclusters was shown. The measurement technique was developed and local depth composition profiling of nanoclusters was fulfilled with 50 nm lateral resolution. The concentration obtained by scanning Auger microscopy is in a good agreement with results calculated using photoelectric measurements.

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Authors and Affiliations

Research and Educational Center for Physics of Solid State Nanostructures, University of Nizhny Novgorod, 23 Gagarin Ave, 603950, Nizhny Novgorod, Russia
G A Maximov, D E Nikolitchev & D O Filatov

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G A Maximov
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D E Nikolitchev
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D O Filatov
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Editors and Affiliations

Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK
A. G. Cullis
Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
J. L. Hutchison

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Maximov, G.A., Nikolitchev, D.E., Filatov, D.O. (2005). Local compositional analysis of GeSi/Si nanoclusters by scanning Auger microscopy. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_22

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DOI: https://doi.org/10.1007/3-540-31915-8_22
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
Online ISBN: 978-3-540-31915-3
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