Local compositional analysis of GeSi/Si nanoclusters by scanning Auger microscopy
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The analytic potential of scanning Auger microscopy for study of the composition of semiconducting nanostructures was demonstrated. The objects of investigation were self-assembled GeSi nanoclusters grown on silicon substrates by molecular beam epitaxy. The practicability of local compositional analysis of single GeSi nanoclusters was shown. The measurement technique was developed and local depth composition profiling of nanoclusters was fulfilled with 50 nm lateral resolution. The concentration obtained by scanning Auger microscopy is in a good agreement with results calculated using photoelectric measurements.
KeywordsMolecular Beam Epitaxy Auger Spectrum Photoelectric Measurement Scan Auger Microscopy Auger Microscopy
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- Valakh M Ya, Dzhagan V N, Lytvyn P M, Yuhimchuk V A, Krasil’nik Z F, Novikov A V and Lobanov D N 2004 Phys Solid State 46, 88Google Scholar