Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes
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We have investigated InGaN nanostructures grown by atmospheric pressure metal-organic vapour phase epitaxy. The variation of the 3D nanostructure density and the wetting layer thickness with growth time have been studied. The nanostructure density was found to saturate with increasing growth time, but unexpectedly, the nanostructure size was also seen to stabilise. We have used high-resolution transmission electron microscopy (HRTEM) to further investigate the wetting layer growth and quantify changes with InGaN growth time.
KeywordsGrowth Time Atomic Force Microscope Scan Atomic Force Microscope Observation Lattice Fringe Spacing Lattice Fringe Image
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