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Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes

  • N K van der Laak
  • R A Oliver
  • M J Kappers
  • C McAleese
  • C J Humphreys
Conference paper
  • 568 Downloads
Part of the Springer Proceedings in Physics book series (SPPHY, volume 107)

Abstract

We have investigated InGaN nanostructures grown by atmospheric pressure metal-organic vapour phase epitaxy. The variation of the 3D nanostructure density and the wetting layer thickness with growth time have been studied. The nanostructure density was found to saturate with increasing growth time, but unexpectedly, the nanostructure size was also seen to stabilise. We have used high-resolution transmission electron microscopy (HRTEM) to further investigate the wetting layer growth and quantify changes with InGaN growth time.

Keywords

Growth Time Atomic Force Microscope Scan Atomic Force Microscope Observation Lattice Fringe Spacing Lattice Fringe Image 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2005

Authors and Affiliations

  • N K van der Laak
    • 1
  • R A Oliver
    • 1
  • M J Kappers
    • 1
  • C McAleese
    • 1
  • C J Humphreys
    • 1
  1. 1.Department of Materials Science and MetallurgyUniversity of CambridgeCambridgeUK

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