TEM measurement of the epitaxial stress of Si/SiGe lamellae prepared by FIB

Cabié, M; Benassayag, G; Rocher, A; Ponchet, A; Hartmann, J M; Fournel, F

doi:10.1007/3-540-31915-8_19

TEM measurement of the epitaxial stress of Si/SiGe lamellae prepared by FIB

M Cabié⁴,
G Benassayag⁴,
A Rocher⁴,
A Ponchet⁴,
J M Hartmann³ &
…
F Fournel³

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Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 107))

Abstract

The misfit stress between an epilayer and its substrate can be determined, via the Stoney formula, from the sample curvature generated by the relaxation of this stress. This curvature method has been transposed to transmission electron microscopy. The Stoney model assumes the observed zones present particular dimensions and geometry. Finite element calculations have shown that narrow rectangular lamellae cut by focused ion beam comply well with the criteria of the model. This technique has been applied to analyse a Si/SiGe(001) structure.

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References

Cabié M, Ponchet A, Rocher A, Durand L and Altibelli A 2005 Appl. Phys. Lett. in press
Google Scholar
Dismukes J P, Ekstrom L and Paff R J 1964 J. Phys. Chem. 68, 3021
CAS Google Scholar
Freund L B, Floro J A and Chason E 1999 Appl. Phys. Lett. 74, 1987
Article CAS Google Scholar
Hartmann J M, Bogumilowicz Y, Holliger P, Laugier F, Truche R, Rolland, Séméria M N, Renard V, Olshanetsky E B, Estibals O, Kvon Z D and Portal J C 2004 Semicond. Sci. Technol. 19, 311
Article CAS Google Scholar
Ponchet A, Cabié M and Rocher A 2004 Eur. Phys. J. Appl. Phys. 26, 87
Article CAS Google Scholar
Stoney G G 1909 Proc. R. Soc. London Ser. A 82, 172
CAS Google Scholar
Townsend P H and Barnett D M 1987 J. Appl. Phys. 62, 4438
Article Google Scholar

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Authors and Affiliations

CEA-DRT — LETI/DTS — CEA/GRE, 38054, Grenoble Cedex 9, France
J M Hartmann & F Fournel
CEMES-CNRS, BP 94347, 31055, Toulouse Cedex 4, France
M Cabié, G Benassayag, A Rocher & A Ponchet

Authors

M Cabié
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G Benassayag
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A Rocher
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A Ponchet
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J M Hartmann
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F Fournel
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Editor information

Editors and Affiliations

Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK
A. G. Cullis
Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
J. L. Hutchison

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Cabié, M., Benassayag, G., Rocher, A., Ponchet, A., Hartmann, J.M., Fournel, F. (2005). TEM measurement of the epitaxial stress of Si/SiGe lamellae prepared by FIB. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_19

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DOI: https://doi.org/10.1007/3-540-31915-8_19
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
Online ISBN: 978-3-540-31915-3
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