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Use of moire fringe patterns to map relaxation in SiGe on insulator structures fabricated on SIMOX substrates

  • A Domenicucci
  • S Bedell
  • R Roy
  • D K Sadana
  • A Mocuta
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 107)

Abstract

Strain Engineering has become extremely important in the semiconductor industry as a means of achieving device performance enhancement as device scaling runs out of steam. It is important to detect strain as a function of position in device sized areas in order to assess the viability of different process schemes. In the present work, Moire fringe patterns were used to measure and map the relaxation effects in SiGe and Si/SiGe structures fabricated on SIMOX substrates. Initially, measurements of the strain state using the Moire technique were correlated with those obtained by x-ray diffraction for blanket SiGe on insulator films over the range 0.2–0.8%. Using this correlation as a basis, several interesting relaxation characteristics were found on patterned structures. Evidence of a rhombohedral relaxation was seen for rectangular SiGe mesas fabricated by patterning and then homogenizing SiGe/Si bilayers on SIMOX substrates. The magnitude of the relaxation was found to depend of the size of the structure and the distance to the nearest edge. Elastic relaxation of Si lines was also seen. Lastly, evidence of non uniform relaxation was seen in the SiGe template in wide channel areas of silicide-contacted device structures.

Keywords

SiGe Layer Moire Fringe Elastic Relaxation Moire Pattern Gate Polysilicon 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. Domenicucci A, Cunningham B and Tsang P 1998 Mat. Res. Soc. Symp. Proc. 523, 103Google Scholar
  2. Hirsch P B, Howie A, Nicholson R B, Pashley D W and Whelan M J 1965 Electron Microscopy of Thin Crystals, 357Google Scholar
  3. Mizuno T, Sugiyama N.; Tezuka T and Takagi S 2002 Appl. Phys. Lett. 18, 601CrossRefGoogle Scholar
  4. Segmuller A, Noyan I C and Speriosu V S 1989 Prog. Crystal Growth and Char. 18 pgs 21CrossRefGoogle Scholar
  5. Takagi S, Mizuno T, Sugiyama N, Tezuka T and Kurobe A 2001 IEICE Trans. Electron. E84 C, 1043Google Scholar
  6. Usuda K, Minuno T, Tezuka T, Sugiyama N, Moriyama Y, Nakaharai S and Takagi S 2004 Appl. Surf. Sci. 224 113CrossRefGoogle Scholar
  7. Yin H, Huang R, Hobart K D, Suo Z, Kuan T S, Inoki C K, Shieh S R, Duffy T S, Kub F J and Sturm J C, 2002 J. Appl. Phys. 91, 9716CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2005

Authors and Affiliations

  • A Domenicucci
    • 1
  • S Bedell
    • 2
  • R Roy
    • 3
  • D K Sadana
    • 2
  • A Mocuta
    • 1
  1. 1.IBM STGHopewell JctUSA
  2. 2.IBM STGYorktown HeightsUSA
  3. 3.Pillsbury, Winthrop, Shaw and Pittman LLPMcCleanUSA

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