Characterization of defects in ZnS and GaN
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The compound semiconductors ZnS and GaN both exhibit a wide direct bandgap and chemical and thermal stability. ZnS can be grown as long belt-like structures, making it potentially useful as a nanoscale component in electronic devices. Since the properties of nanoscale materials typically differ from those of their bulk counterparts, a fundamental understanding of the structure of the ZnS nanostructures is essential, particularly since they contain significant numbers of planar defects. Commercial samples of GaN also contain large numbers of planar defects which are not well understood. The present study will discuss similar defects in the two materials.
KeywordsPlanar Defect Inversion Domain Closure Failure Diffraction Contrast Imaging Nanoscale Component
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