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Characterization of defects in ZnS and GaN

  • J Deneen
  • S Kumar
  • C R Perrey
  • C B Carter
Conference paper
  • 551 Downloads
Part of the Springer Proceedings in Physics book series (SPPHY, volume 107)

Abstract

The compound semiconductors ZnS and GaN both exhibit a wide direct bandgap and chemical and thermal stability. ZnS can be grown as long belt-like structures, making it potentially useful as a nanoscale component in electronic devices. Since the properties of nanoscale materials typically differ from those of their bulk counterparts, a fundamental understanding of the structure of the ZnS nanostructures is essential, particularly since they contain significant numbers of planar defects. Commercial samples of GaN also contain large numbers of planar defects which are not well understood. The present study will discuss similar defects in the two materials.

Keywords

Planar Defect Inversion Domain Closure Failure Diffraction Contrast Imaging Nanoscale Component 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2005

Authors and Affiliations

  • J Deneen
    • 1
  • S Kumar
    • 1
  • C R Perrey
    • 1
  • C B Carter
    • 1
  1. 1.Department of Chemical Engineering and Materials ScienceUniversity of MinnesotaMinneapolisUSA

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