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Leistungselektronische Bauelemente

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Kapitel 8 Laterale bauelemente

  1. Allstot, D.J.; Lui, S.K.; et al. A New High Voltage Analog Compatible I 2 L Process. High Voltage Integrated Circuits, IEEE Press 1988, S. 135–138

    Google Scholar 

  2. Appels, J.A.; Vaes, H.M.J. High Voltage Thin Layer Devices. High Voltage Integrated Circuits, IEEE Press 1988, S. 94–96

    Google Scholar 

  3. Beasom, J.D. A 200 V Complementary Vertical Bipolar Process with Compatible Logic. High Voltage Integrated Circuits, IEEE Press 1988, S. 121–123

    Google Scholar 

  4. Beasom, J.D. A High Performance High Voltage Lateral PNP Structure. High Voltage Integrated Circuits, IEEE Press 1988, S. 53–56

    Google Scholar 

  5. Chang, M.F.; Pifer, G.; et al. Lateral HVIC with 1200 V Bipolar and Field Effect Devices. High Voltage Integrated Circuits, IEEE Press 1988, S. 167–175

    Google Scholar 

  6. Chow, T.P.; et al. A Reverse-Channel, High-Voltage Lateral IGBT. ISPSD 1994 Davos, S. 57–62

    Google Scholar 

  7. Chow, T.P.; Baliga, B.J.; et al. Design and Characterization of P-Channel VDMOS-LIGBT Transistors. MADEP-EPE 1991 Florenz, S. 0-417–419

    Google Scholar 

  8. Claessen, H.R.; van der Zee, P. An Accurate DC Model for High Voltage Lateral DMOS Transistors Suited for CACD. High Voltage Integrated Circuits, IEEE Press 1988, S. 87–93

    Google Scholar 

  9. Konstapel, R.; Korec, J. Forward Blocking Characteristics of SOI Power Devices at High Temperatures. ISPSD 1994 Davos, S. 117–122

    Google Scholar 

  10. Declerq, M.J.; Plummer, J.D. Avalanche Breakdown in High Voltage D-MOS Devices. High Voltage Integrated Circuits, IEEE Press 1988, S. 83–86

    Google Scholar 

  11. Dolny, G.M.; Schade, O.H.; et al. Enhanced CMOS for Analog-Digital Power IC Applications. High Voltage Integrated Circuits, IEEE Press 1988, S. 154–159

    Google Scholar 

  12. Fatemizadeh, D.; Silber, D.; et al. Modelling of LDMOS and LIGBT Structures at High Temperatures. ISPSD 1994 Davos, S. 137–142

    Google Scholar 

  13. Fujishima, N.; Kitamura, A.; et al. High Performance Lateral DMOSFET with Oxide Sidewall Spacers. ISPSD 1994 Davos, S. 349–354

    Google Scholar 

  14. Halbo, L.; Hansen, T.A. I 2 L and High Voltage Analog Circuitry on the Same Chip. High Voltage Integrated Circuits, IEEE Press 1988, S. 139–144

    Google Scholar 

  15. Hartman, A.R.; Berthold, J.E.; et al. 530 V Integrated Gated Diode Switch for Telecommunications. High Voltage Integrated Circuits, IEEE Press 1988, S. 124–127

    Google Scholar 

  16. Krishna, S.; Kuo, J. An Analog Technology Integrates Bipolar, CMOS, and High Voltage DMOS Transistors. High Voltage Integrated Circuits, IEEE Press 1988, S. 160–166

    Google Scholar 

  17. Li, Y.Q.; Salama C.A.T.; et al. Submicron BiCMOS Compatible High Voltage MOS Transistor. ISPSD 1994 Davos, S. 355–359

    Google Scholar 

  18. Ludikhuize, A.W. High Voltage DMOS and PMOS in Analog ICs High Voltage Integrated Circuits, IEEE Press 1988, S. 97–100

    Google Scholar 

  19. Mukkherjee, S.; Chou, C.J.; et al. The Effects of SIPOS Passivation on DC and Switching Performance of High Voltage MOS Transistors. High Voltage Integrated Circuits, IEEE Press 1988, S. 79–83

    Google Scholar 

  20. Neubrand, H.; Constapel, R.; et al. Thermal Behaviour of Lateral Power Devices on SOI Substrates. ISPSD 1994 Davos, S. 123–130

    Google Scholar 

  21. Parpia, Z.; Mena, J.G.; et al. A Novel CMOS-Compatible High-Voltage Transistor Structure. High Voltage Integrated Circuits, IEEE Press 1988, S. 116–120

    Google Scholar 

  22. Pattanayak, D.N.; Robinson, A.L.; et al. n-Channel Lateral Insulated Gate Transistor. High Voltage Integrated Circuits, IEEE Press 1988, S. 101–107

    Google Scholar 

  23. Plummer, J.D.; Meindl, J.D. A Monolithic 200 V CMOS Analog Switch. High Voltage Integrated Circuits, IEEE Press 1988, S. 145–153

    Google Scholar 

  24. Rumennig, V.; Heald, D.L. Integrated High and Low Voltage CMOS Technology. High Voltage Integrated Circuits, IEEE Press 1988, S. 75–78

    Google Scholar 

  25. Sin, J.K.O.; Salama, C.A.T.; et al. The SINFET — A Schottky Injection MOS-Gated Power Transistor. High Voltage Integrated Circuits, IEEE Press 1988, S. 108–116

    Google Scholar 

  26. Sugawara, Y. High Voltage Complementary Gated MOS Thyristors. High Voltage Integrated Circuits, IEEE Press 1988, S. 128–132

    Google Scholar 

  27. Sunkavalli, R.; Baliga, B.J.; et al. High Temperature Performance of Dielectrical Isolated LDMOSFET. ISPSD 1994 Davos, S. 359–364

    Google Scholar 

  28. Tang, A.Y.; Johnston, R.; et al. A Dual Buried Layer Technology for the Fabrication of High Voltage NPN Devices Compatible with a 1.5 Micron Epitaxial Bipolar Process. High Voltage Integrated Circuits, IEEE Press 1988, S. 57–60

    Google Scholar 

  29. Thapar, N.; Baliga, B.J. A Comparison of High Frequency Cell Designs for High Voltage DMOSFETs. ISPSD 1994 Davos, S. 131–136

    Google Scholar 

  30. Villa, F.F. Improved Second Breakdown of Integrated Bipolar Power Transistors. High Voltage Integrated Circuits, IEEE Press 1988, S. 61–66

    Google Scholar 

  31. Williams, R.K.; Sevilla, L.T.; et al. A DI/JI-Compatible Monolithic High-Voltage Multiplexer. High Voltage Integrated Circuits, IEEE Press 1988, S. 176–184

    Google Scholar 

  32. Yamagushi, T.; Morimoto S. Process and Device Design of a 1000 V MOS IC. High Voltage Integrated Circuits, IEEE Press 1988, S. 67–74

    Google Scholar 

  33. Yung, C.L.; Vincent, H. Design of Lateral IGBT Power Devices with Current Sensor. IAS 1995 Orlando, S. 1010–1018

    Google Scholar 

Smart-Power-Bauelemente

  1. Andreini, A.; Contiero, C.; et al. A New Integrated Silicon Gate Technology Combining Bipolar Linear, CCMOS Logic and DMOS Power Parts. High Voltage Integrated Circuits, IEEE Press 1988, S. 204–210

    Google Scholar 

  2. Andreini, A.; Contiero, C.; Galbati, C. BCD Technology for Smart Power ICs. in: Smart Power ICs, Springer Verlag, Berlin 2002

    Google Scholar 

  3. Baliga, B.J.; Adler, M.S.; et al. The Insulated Gate Transistor. High Voltage Integrated Circuits, IEEE Press 1988, S. 192–199

    Google Scholar 

  4. Bauer, F.; Stockmeier, T.; et al. On the Suitability of BiMOS High Power Devices in Intelligent, Snubberless Power Conditioning Circuits. ISPSD 1994 Davos, S. 201–206

    Google Scholar 

  5. Bertele, M.; Sander, R.; et al. Schaltungsanordnung zur Einstellung der Abschaltflanke eines Laststromes. Offenlegung, Deutsches Patentamt, DE 19948829

    Google Scholar 

  6. Bodensohn, A.; Korec, J.; et al. The Depleted Base Transistor a Device for Smart Power Applications. MADEP-EPE 1991 Florenz, S. 0-249–251

    Google Scholar 

  7. Borucki, L. Modeling of Transient Heating in Smart Power Applications. in: Analog Circuit Design, Kluwer Academic Publishers, Boston, Dordrecht, London, 1998

    Google Scholar 

  8. Choi, W.-B.; Sung, W.-J.; Park, C.-I.; Kim, S.; Sung, M. Y. New Lateral Insulated-Gate Bipolar Transistor on Silicon-on-Insulator. Journal of the Korean Physical Society, Vol. 40, No. 4, S. 645–648, April 2002

    Google Scholar 

  9. Chokhawal, R.; Castino, G. IGBT Fault Current Limiting Circuit. IAS 1993, S. 1339–1345

    Google Scholar 

  10. Consoli, A.; Licitra, C.; et al. Comparative Investigations on Power Losses in Soft-Switching Insulated Gate Devices. ISPSD 1994 Davos, S. 87–92

    Google Scholar 

  11. Corsi, M.; Fatori, F. High Voltage Automotive Interface Design, in a VLSI Compatible BICMOS Technology. ISPSD 1994 Davos, S. 329–336

    Google Scholar 

  12. Darwish, M. The Role of Semiconductor Devices in Portable Electronics Power Management. Keynote — IEE Institution of Electrical Engineers, London, June 29th 1999

    Google Scholar 

  13. Frank, R; Aloisi, P. Power Devices with Integrated Protection. MADEP-EPE 1991 Florenz, S. 0-110–113

    Google Scholar 

  14. Gabriel, R. An Intrinsic Save Smart Power IGBT. MADEP-EPE 1991 Florenz, S. 0-0179–182

    Google Scholar 

  15. Gammel, J.C. High Voltage Solid Rate Relays for Telecommunications. High Voltage Integrated Circuits, IEEE Press 1988, S. 303–306

    Google Scholar 

  16. Gantioler, Bergmann, Kanert, Stecher Halbleiterlösungen der Zukunft für die Herausforderungen der Leistungselektronik im Kraftfahrzeug. 21. Tagung Elektronik im KFZ, Haus der Technik — Essen, Mai 2001, München, Deutschland

    Google Scholar 

  17. Graf, A.; Estl, H. Fuse Replacement with Smart Power Semiconductors. 8th Int. Conference Vehicle Electronics, October 8–9, 1998, Baden-Baden

    Google Scholar 

  18. Hamada, K.; et al. A 60 V BiCDMOS Device Technology for Automative Applications. IEEE IAS 1995, S. 986–990

    Google Scholar 

  19. Ihara, M.; Arimoto, Y.; et al. Spinel-Isolated High-Voltage ICs. High Voltage Integrated Circuits, IEEE Press 1988, S. 321–322

    Google Scholar 

  20. Infineon Technologies Datenblatt des BTS555, 10/2003.

    Google Scholar 

  21. Kimimori, H.; Fumiaki, K.; et al. A 60 V BiCDMOS Device Technology for Automotive Applications. IAS 1995 Orlando, S. 986–990

    Google Scholar 

  22. Lechner, A.; Xu, Ch.; et al. Smart Power Devices for High-Current Switching in Automotive Applications. European Microelectronics Application Conference, Barcelona, Spain, Mai 1997

    Google Scholar 

  23. Lonzi, L.; Piccoli, M.; et al. Reliability of Smart Power ICs. in: Smart Power ICs, Springer Verlag, Berlin 2002

    Google Scholar 

  24. Lorenz, L.; Reinmuth, K. The New Generation of Power Semiconducters. ISPE 1992 Seoul, S. 62–70

    Google Scholar 

  25. Masahiro, K.; Masato, K.; et al. Smart IGBT Models and Its Applications for Power Converter Design. IAS 1994 Denver, 1168–1173

    Google Scholar 

  26. Matsudai, T.; Yamaguchi, Y.; et al. Thin SOI IGBT Leakage Current and a New Device Structure for High Temperature Operation. ISPSD 1994 Davos, S. 399–404

    Google Scholar 

  27. Melito, M. The VB027: Electronic Ignition In VI-Power Technology. Application Note, ST Microelectronics

    Google Scholar 

  28. Mendonca, P.; Castro, M.I.; et al. Breakdown Voltage Improvemanet of Standard MOS Technologies Targeted at Smart Power. IAS 1995 Orlando, S. 937–945

    Google Scholar 

  29. Metzner, D.; Schröder, D. A Physical GTO-Model for Circuit Simulation. IEEE-IAS 1992, Houston, USA, S. 1066–1073.

    Google Scholar 

  30. Metzner, D.; Schäfer, J.; Xu, Ch. Multi Domain Behavioral Models of Smart-Power ICs for Design Integration in Automotive Applications. Proceedings of the IEEE International Workshop on Behavioral Modeling and Simulation BMAS 2001, Santa Rosa CA, USA, S. 84–89

    Google Scholar 

  31. Metzner, D.; Schäffner, C.; Xu, Ch. Verhaltensmodelle von Smart Power Switches — Ein Beitrag zur effizienten Systementwicklung. 10ter Internationaler Kongress Elektronik im Kraftfahrzeug, Baden-Baden, Germany, September 2001

    Google Scholar 

  32. Metzner, D.; Schäfer, J. Integrated Mechatronic Design and Simulation of a Door Soft Close Automatic with Behavioral Models of Smart Power ICs. Society of Automotive Engineers (SAE) Conference 2002

    Google Scholar 

  33. Metzner, D.; Schäfer, J. Architecture Development of Mixed Signal ICs for Automotive Application with VHDL-AMS. Proceedings of the IEEE International Workshop on Behavioral Modeling and Simulation BMAS 2002, Santa Rosa CA, USA, S. 7–13

    Google Scholar 

  34. Metzner, D.; Schäfer, J.; et al. Investigations of a Direct Injection System with a „Simulatable Specification“ of Smart Bridge Driver ICs. Society of Automotive Engineers (SAE) Conference 2003

    Google Scholar 

  35. Motto, E.R.; Donlon, J.F.; et al. A New Generation of Intelligent Power Devices for Motor Drive Applications. IAS 1993, S. 1332–1338

    Google Scholar 

  36. Mukherjee, S. Technology for High Voltage IC. in: Smart Power ICs, Springer Verlag, Berlin 2002

    Google Scholar 

  37. Murari, B. Design Methodologies for Mixed Power Integrated Circuits. in: Analog Circuit Design, Kluwer Academic Publishers, Boston, Dordrecht, London, 1998

    Google Scholar 

  38. Nakashima, S.; Maeda, Y.; et al. High Voltage CMOS SIMOX Technology and Its Application to a BSH-LSI. High Voltage Integrated Circuits, IEEE Press 1988, S. 327–334

    Google Scholar 

  39. Ohashi, H.; Ohura, J.; et al. Improved Dielectrically Isolated Device Integration by Siliconwafer Direct Bonding (SDB) Technique. High Voltage Integrated Circuits, IEEE Press 1988, S. 323–326

    Google Scholar 

  40. Reinmuth, K.; Stut, H.; et al. Intelligent Power Modules for Driving Systems. ISPSD 1994 Davos, S. 93–99

    Google Scholar 

  41. Reinmuth, K.; Xu, Ch. Experimental Investigation, Simulation and Analyses of Avalanche Effects on Power MOSFETs. PESC 90, San Antonio, Texas, USA Juni 1990, S. 120–125

    Google Scholar 

  42. Rischmüller, K.G. Smartpower — Quo Vadis? MADEP-EPE 1991 Florenz, S. 0-420 ff.

    Google Scholar 

  43. Robb, S.P.; Sutor, J.L. Recent Advances in Power Integrated Circuits with High Level Integration. ISPSD 1994 Davos, S. 343–348

    Google Scholar 

  44. Robb, S.P.; Taomoto, A.A.; et al. Current Sensing in IGBTs for Short Circuit Protection. ISPSD 1994 Davos, S. 81–86

    Google Scholar 

  45. Rossi, D. Power MOSFET Driving Circuits and Protection Techniques. in: Smart Power ICs, Springer Verlag, Berlin 2002

    Google Scholar 

  46. Sangswang, A. Uncertainty Modeling of Power Electronic Converter Dynamics. Ph.D. Thesis, Drexel University, 2003

    Google Scholar 

  47. Sakuma, H.; Kuriyama, T.; et al. A High Voltage Offset-Gate SOS/MOS Transistor. High Voltage Integrated Circuits, IEEE Press 1988, S. 317–320

    Google Scholar 

  48. Schröder, D. Simulation of Power Electronic Circuits. Inter. Conf. on Power Electronis (ICPE), Oct. 1998, Seoul, Korea, Proc. of ICPE 98, S. 212–218

    Google Scholar 

  49. Seki, Y.; Harada, Y.; et al. A New IGBT with a Monolithic Over-Current Protection Circuit. ISPSD 1994 Davos, S. 31–36

    Google Scholar 

  50. Shimizu, Y.; Nakano, Y.; et al. A High Performance Intelligent IGBT with Over-Current Protection. ISPSD 1994 Davos, S. 37–44

    Google Scholar 

  51. Shen, Z.; So, K.C.; et al. Comparative Study of Integrated Current Sensors in n-Channel IGBTs. ISPSD 1994 Davos, S. 75–80

    Google Scholar 

  52. Stasi, F.J.; Szepesi, T.S. A 5A 100 KHz Monolithic Biopolar DC/DC Converter. EPE 1993 Brighton, S. 201–208

    Google Scholar 

  53. Sugawara, Y.; Kamei T.; et al. Practical Size Limits of High Voltage ICs. High Voltage Integrated Circuits, IEEE Press 1988, S. 307–310

    Google Scholar 

  54. Sugawara, Y.; Miyata, K.; et al. 350 V Analog-Digital Compatible Power ICs Using Dielectrically Isolated Substrates. High Voltage Integrated Circuits, IEEE Press 1988, S. 311–316

    Google Scholar 

  55. Sugawara, Y. Dielectric Isolation Technologies and Power ICs. in: Smart Power ICs, Springer Verlag, Berlin 2002

    Google Scholar 

  56. Tanaka, T.; Yasuda, Y.; et al. A New MOS-Gate Bipolar Transistor for Power Switches. High Voltage Integrated Circuits, IEEE Press 1988, S. 187–191

    Google Scholar 

  57. Theobald, Th.; Fischer, H.; et al. An Ignition IGBT with Smart Functions in Chip on Chip Technology. International Symposium on Power Semiconductor Devices and IC’s, Osaka, Japan, June 2001

    Google Scholar 

  58. Tihayi, J. Smart Discrete Technologies. in: Smart Power ICs, Springer Verlag, Berlin 2002

    Google Scholar 

  59. Tihanyi, J.; Koroncai, A. Schaltungsanordnung zum Erfassen des Laststroms eines Leistungs-Halbleiterbauelementes mit sourceseitiger Last. Deutsches Patentamt, DE 19520735

    Google Scholar 

  60. Toshihiro, N.; Shigekazu, Y.; et al. New Intelligent Power Module for Electric Vehicles. IAS 1995 Orlando, S. 954–958

    Google Scholar 

  61. Walko, J. Motorola’s SmartMOS Process Ups Operating Voltage Integration. EE Times, 07.04.2003

    Google Scholar 

  62. Weijers, J.; Boekhout, C. Batterieklemme. Offenlegung Europäsches Patentamt, EP0824417

    Google Scholar 

  63. Wilson, R. Preparing High-V Devices For SoC Integration. EE Times, 30.01.2003, Online Ausgabe.

    Google Scholar 

  64. Wrathall, R.S. The Design of a High Power Solid State Automotive Switch in CMOS-VDMOS Technology. High Voltage Integrated Circuits, IEEE Press 1988, S. 200–204

    Google Scholar 

  65. Xu, Ch.; Schröder, D. Modelling and Simulation of Power MOSFETs and Power Diodes. PESC 88, Kyoto, Japan, April 1988, S. 76–83

    Google Scholar 

  66. Xu, Ch.; Schröder, D. A Unified Model for the Power MOSFET Including the Inverse Diode and the Parasitic Bipolar Transistor. EPE 89, Aachen, Oktober 1989, S. 139–143

    Google Scholar 

  67. Xu, Ch.; Sander, R.; et al. 4 mΘ Smart-Power Highside Schalter mit Strom-Sense. 17. Tagung „Elektronik im Kraftfahrzeug“, München, Germany, June 1997

    Google Scholar 

  68. Xu, Ch. Systematic Design of Smart Power Devices. 2nd International Power Electronics and Motion Control Conference, Hangzhou, China, November 1999

    Google Scholar 

  69. Xu, Ch. Models for High-Voltage Transistors in a Standard CMOS Process. EE Times, 31.01.2003, Online Ausgabe

    Google Scholar 

  70. Yamada, T.; Majumdar, G.; et al. Next Generation of Power Modules — An Evolutionary Change from Discrete Semiconductors to System Semiconductors. ISPSD 1994 Davos, S. 3–8

    Google Scholar 

  71. Zambrano, R. Improved Structures for Power MOSFETs with On-Chip Full Protection. EPE 1993 Brighton, S. 1–4

    Google Scholar 

  72. Zaremba, D.; Mansmann, J. Power Integrated Circuit Makes Board Level Overvoltage and Overtemperature Protection Simple and Inexpensive. High Voltage Integrated Circuits, IEEE Press 1988, S. 211–217

    Google Scholar 

  73. Zitta, H. Smart Power Circuits for Power Switches including Diagnostic Functions. in: Analog Circuit Design, Kluwer Academic Publishers, Boston/Dordrecht/London, 1998

    Google Scholar 

  74. Zommer, N.D. The Monolithic HV BICMOS. Proc. Int. Electron Device Meeting (1981), S. 263–266

    Google Scholar 

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Xu, C. (2006). Smart-Power-Bauelemente. In: Leistungselektronische Bauelemente. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-31735-X_9

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