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Kapitel 8 Laterale bauelemente

  1. [523]
    Allstot, D.J.; Lui, S.K.; et al. A New High Voltage Analog Compatible I 2 L Process. High Voltage Integrated Circuits, IEEE Press 1988, S. 135–138Google Scholar
  2. [524]
    Appels, J.A.; Vaes, H.M.J. High Voltage Thin Layer Devices. High Voltage Integrated Circuits, IEEE Press 1988, S. 94–96Google Scholar
  3. [525]
    Beasom, J.D. A 200 V Complementary Vertical Bipolar Process with Compatible Logic. High Voltage Integrated Circuits, IEEE Press 1988, S. 121–123Google Scholar
  4. [526]
    Beasom, J.D. A High Performance High Voltage Lateral PNP Structure. High Voltage Integrated Circuits, IEEE Press 1988, S. 53–56Google Scholar
  5. [527]
    Chang, M.F.; Pifer, G.; et al. Lateral HVIC with 1200 V Bipolar and Field Effect Devices. High Voltage Integrated Circuits, IEEE Press 1988, S. 167–175Google Scholar
  6. [528]
    Chow, T.P.; et al. A Reverse-Channel, High-Voltage Lateral IGBT. ISPSD 1994 Davos, S. 57–62Google Scholar
  7. [529]
    Chow, T.P.; Baliga, B.J.; et al. Design and Characterization of P-Channel VDMOS-LIGBT Transistors. MADEP-EPE 1991 Florenz, S. 0-417–419Google Scholar
  8. [530]
    Claessen, H.R.; van der Zee, P. An Accurate DC Model for High Voltage Lateral DMOS Transistors Suited for CACD. High Voltage Integrated Circuits, IEEE Press 1988, S. 87–93Google Scholar
  9. [531]
    Konstapel, R.; Korec, J. Forward Blocking Characteristics of SOI Power Devices at High Temperatures. ISPSD 1994 Davos, S. 117–122Google Scholar
  10. [532]
    Declerq, M.J.; Plummer, J.D. Avalanche Breakdown in High Voltage D-MOS Devices. High Voltage Integrated Circuits, IEEE Press 1988, S. 83–86Google Scholar
  11. [533]
    Dolny, G.M.; Schade, O.H.; et al. Enhanced CMOS for Analog-Digital Power IC Applications. High Voltage Integrated Circuits, IEEE Press 1988, S. 154–159Google Scholar
  12. [534]
    Fatemizadeh, D.; Silber, D.; et al. Modelling of LDMOS and LIGBT Structures at High Temperatures. ISPSD 1994 Davos, S. 137–142Google Scholar
  13. [535]
    Fujishima, N.; Kitamura, A.; et al. High Performance Lateral DMOSFET with Oxide Sidewall Spacers. ISPSD 1994 Davos, S. 349–354Google Scholar
  14. [536]
    Halbo, L.; Hansen, T.A. I 2 L and High Voltage Analog Circuitry on the Same Chip. High Voltage Integrated Circuits, IEEE Press 1988, S. 139–144Google Scholar
  15. [537]
    Hartman, A.R.; Berthold, J.E.; et al. 530 V Integrated Gated Diode Switch for Telecommunications. High Voltage Integrated Circuits, IEEE Press 1988, S. 124–127Google Scholar
  16. [538]
    Krishna, S.; Kuo, J. An Analog Technology Integrates Bipolar, CMOS, and High Voltage DMOS Transistors. High Voltage Integrated Circuits, IEEE Press 1988, S. 160–166Google Scholar
  17. [539]
    Li, Y.Q.; Salama C.A.T.; et al. Submicron BiCMOS Compatible High Voltage MOS Transistor. ISPSD 1994 Davos, S. 355–359Google Scholar
  18. [540]
    Ludikhuize, A.W. High Voltage DMOS and PMOS in Analog ICs High Voltage Integrated Circuits, IEEE Press 1988, S. 97–100Google Scholar
  19. [541]
    Mukkherjee, S.; Chou, C.J.; et al. The Effects of SIPOS Passivation on DC and Switching Performance of High Voltage MOS Transistors. High Voltage Integrated Circuits, IEEE Press 1988, S. 79–83Google Scholar
  20. [542]
    Neubrand, H.; Constapel, R.; et al. Thermal Behaviour of Lateral Power Devices on SOI Substrates. ISPSD 1994 Davos, S. 123–130Google Scholar
  21. [543]
    Parpia, Z.; Mena, J.G.; et al. A Novel CMOS-Compatible High-Voltage Transistor Structure. High Voltage Integrated Circuits, IEEE Press 1988, S. 116–120Google Scholar
  22. [544]
    Pattanayak, D.N.; Robinson, A.L.; et al. n-Channel Lateral Insulated Gate Transistor. High Voltage Integrated Circuits, IEEE Press 1988, S. 101–107Google Scholar
  23. [545]
    Plummer, J.D.; Meindl, J.D. A Monolithic 200 V CMOS Analog Switch. High Voltage Integrated Circuits, IEEE Press 1988, S. 145–153Google Scholar
  24. [546]
    Rumennig, V.; Heald, D.L. Integrated High and Low Voltage CMOS Technology. High Voltage Integrated Circuits, IEEE Press 1988, S. 75–78Google Scholar
  25. [547]
    Sin, J.K.O.; Salama, C.A.T.; et al. The SINFET — A Schottky Injection MOS-Gated Power Transistor. High Voltage Integrated Circuits, IEEE Press 1988, S. 108–116Google Scholar
  26. [548]
    Sugawara, Y. High Voltage Complementary Gated MOS Thyristors. High Voltage Integrated Circuits, IEEE Press 1988, S. 128–132Google Scholar
  27. [549]
    Sunkavalli, R.; Baliga, B.J.; et al. High Temperature Performance of Dielectrical Isolated LDMOSFET. ISPSD 1994 Davos, S. 359–364Google Scholar
  28. [550]
    Tang, A.Y.; Johnston, R.; et al. A Dual Buried Layer Technology for the Fabrication of High Voltage NPN Devices Compatible with a 1.5 Micron Epitaxial Bipolar Process. High Voltage Integrated Circuits, IEEE Press 1988, S. 57–60Google Scholar
  29. [551]
    Thapar, N.; Baliga, B.J. A Comparison of High Frequency Cell Designs for High Voltage DMOSFETs. ISPSD 1994 Davos, S. 131–136Google Scholar
  30. [552]
    Villa, F.F. Improved Second Breakdown of Integrated Bipolar Power Transistors. High Voltage Integrated Circuits, IEEE Press 1988, S. 61–66Google Scholar
  31. [553]
    Williams, R.K.; Sevilla, L.T.; et al. A DI/JI-Compatible Monolithic High-Voltage Multiplexer. High Voltage Integrated Circuits, IEEE Press 1988, S. 176–184Google Scholar
  32. [554]
    Yamagushi, T.; Morimoto S. Process and Device Design of a 1000 V MOS IC. High Voltage Integrated Circuits, IEEE Press 1988, S. 67–74Google Scholar
  33. [555]
    Yung, C.L.; Vincent, H. Design of Lateral IGBT Power Devices with Current Sensor. IAS 1995 Orlando, S. 1010–1018Google Scholar

Smart-Power-Bauelemente

  1. [556]
    Andreini, A.; Contiero, C.; et al. A New Integrated Silicon Gate Technology Combining Bipolar Linear, CCMOS Logic and DMOS Power Parts. High Voltage Integrated Circuits, IEEE Press 1988, S. 204–210Google Scholar
  2. [557]
    Andreini, A.; Contiero, C.; Galbati, C. BCD Technology for Smart Power ICs. in: Smart Power ICs, Springer Verlag, Berlin 2002Google Scholar
  3. [558]
    Baliga, B.J.; Adler, M.S.; et al. The Insulated Gate Transistor. High Voltage Integrated Circuits, IEEE Press 1988, S. 192–199Google Scholar
  4. [559]
    Bauer, F.; Stockmeier, T.; et al. On the Suitability of BiMOS High Power Devices in Intelligent, Snubberless Power Conditioning Circuits. ISPSD 1994 Davos, S. 201–206Google Scholar
  5. [560]
    Bertele, M.; Sander, R.; et al. Schaltungsanordnung zur Einstellung der Abschaltflanke eines Laststromes. Offenlegung, Deutsches Patentamt, DE 19948829Google Scholar
  6. [561]
    Bodensohn, A.; Korec, J.; et al. The Depleted Base Transistor a Device for Smart Power Applications. MADEP-EPE 1991 Florenz, S. 0-249–251Google Scholar
  7. [562]
    Borucki, L. Modeling of Transient Heating in Smart Power Applications. in: Analog Circuit Design, Kluwer Academic Publishers, Boston, Dordrecht, London, 1998Google Scholar
  8. [563]
    Choi, W.-B.; Sung, W.-J.; Park, C.-I.; Kim, S.; Sung, M. Y. New Lateral Insulated-Gate Bipolar Transistor on Silicon-on-Insulator. Journal of the Korean Physical Society, Vol. 40, No. 4, S. 645–648, April 2002Google Scholar
  9. [564]
    Chokhawal, R.; Castino, G. IGBT Fault Current Limiting Circuit. IAS 1993, S. 1339–1345Google Scholar
  10. [565]
    Consoli, A.; Licitra, C.; et al. Comparative Investigations on Power Losses in Soft-Switching Insulated Gate Devices. ISPSD 1994 Davos, S. 87–92Google Scholar
  11. [566]
    Corsi, M.; Fatori, F. High Voltage Automotive Interface Design, in a VLSI Compatible BICMOS Technology. ISPSD 1994 Davos, S. 329–336Google Scholar
  12. [567]
    Darwish, M. The Role of Semiconductor Devices in Portable Electronics Power Management. Keynote — IEE Institution of Electrical Engineers, London, June 29th 1999Google Scholar
  13. [568]
    Frank, R; Aloisi, P. Power Devices with Integrated Protection. MADEP-EPE 1991 Florenz, S. 0-110–113Google Scholar
  14. [569]
    Gabriel, R. An Intrinsic Save Smart Power IGBT. MADEP-EPE 1991 Florenz, S. 0-0179–182Google Scholar
  15. [570]
    Gammel, J.C. High Voltage Solid Rate Relays for Telecommunications. High Voltage Integrated Circuits, IEEE Press 1988, S. 303–306Google Scholar
  16. [571]
    Gantioler, Bergmann, Kanert, Stecher Halbleiterlösungen der Zukunft für die Herausforderungen der Leistungselektronik im Kraftfahrzeug. 21. Tagung Elektronik im KFZ, Haus der Technik — Essen, Mai 2001, München, DeutschlandGoogle Scholar
  17. [572]
    Graf, A.; Estl, H. Fuse Replacement with Smart Power Semiconductors. 8th Int. Conference Vehicle Electronics, October 8–9, 1998, Baden-BadenGoogle Scholar
  18. [573]
    Hamada, K.; et al. A 60 V BiCDMOS Device Technology for Automative Applications. IEEE IAS 1995, S. 986–990Google Scholar
  19. [574]
    Ihara, M.; Arimoto, Y.; et al. Spinel-Isolated High-Voltage ICs. High Voltage Integrated Circuits, IEEE Press 1988, S. 321–322Google Scholar
  20. [575]
    Infineon Technologies Datenblatt des BTS555, 10/2003.Google Scholar
  21. [576]
    Kimimori, H.; Fumiaki, K.; et al. A 60 V BiCDMOS Device Technology for Automotive Applications. IAS 1995 Orlando, S. 986–990Google Scholar
  22. [577]
    Lechner, A.; Xu, Ch.; et al. Smart Power Devices for High-Current Switching in Automotive Applications. European Microelectronics Application Conference, Barcelona, Spain, Mai 1997Google Scholar
  23. [578]
    Lonzi, L.; Piccoli, M.; et al. Reliability of Smart Power ICs. in: Smart Power ICs, Springer Verlag, Berlin 2002Google Scholar
  24. [579]
    Lorenz, L.; Reinmuth, K. The New Generation of Power Semiconducters. ISPE 1992 Seoul, S. 62–70Google Scholar
  25. [580]
    Masahiro, K.; Masato, K.; et al. Smart IGBT Models and Its Applications for Power Converter Design. IAS 1994 Denver, 1168–1173Google Scholar
  26. [581]
    Matsudai, T.; Yamaguchi, Y.; et al. Thin SOI IGBT Leakage Current and a New Device Structure for High Temperature Operation. ISPSD 1994 Davos, S. 399–404Google Scholar
  27. [582]
    Melito, M. The VB027: Electronic Ignition In VI-Power Technology. Application Note, ST MicroelectronicsGoogle Scholar
  28. [583]
    Mendonca, P.; Castro, M.I.; et al. Breakdown Voltage Improvemanet of Standard MOS Technologies Targeted at Smart Power. IAS 1995 Orlando, S. 937–945Google Scholar
  29. [584]
    Metzner, D.; Schröder, D. A Physical GTO-Model for Circuit Simulation. IEEE-IAS 1992, Houston, USA, S. 1066–1073.Google Scholar
  30. [585]
    Metzner, D.; Schäfer, J.; Xu, Ch. Multi Domain Behavioral Models of Smart-Power ICs for Design Integration in Automotive Applications. Proceedings of the IEEE International Workshop on Behavioral Modeling and Simulation BMAS 2001, Santa Rosa CA, USA, S. 84–89Google Scholar
  31. [586]
    Metzner, D.; Schäffner, C.; Xu, Ch. Verhaltensmodelle von Smart Power Switches — Ein Beitrag zur effizienten Systementwicklung. 10ter Internationaler Kongress Elektronik im Kraftfahrzeug, Baden-Baden, Germany, September 2001Google Scholar
  32. [587]
    Metzner, D.; Schäfer, J. Integrated Mechatronic Design and Simulation of a Door Soft Close Automatic with Behavioral Models of Smart Power ICs. Society of Automotive Engineers (SAE) Conference 2002Google Scholar
  33. [588]
    Metzner, D.; Schäfer, J. Architecture Development of Mixed Signal ICs for Automotive Application with VHDL-AMS. Proceedings of the IEEE International Workshop on Behavioral Modeling and Simulation BMAS 2002, Santa Rosa CA, USA, S. 7–13Google Scholar
  34. [589]
    Metzner, D.; Schäfer, J.; et al. Investigations of a Direct Injection System with a „Simulatable Specification“ of Smart Bridge Driver ICs. Society of Automotive Engineers (SAE) Conference 2003Google Scholar
  35. [590]
    Motto, E.R.; Donlon, J.F.; et al. A New Generation of Intelligent Power Devices for Motor Drive Applications. IAS 1993, S. 1332–1338Google Scholar
  36. [591]
    Mukherjee, S. Technology for High Voltage IC. in: Smart Power ICs, Springer Verlag, Berlin 2002Google Scholar
  37. [592]
    Murari, B. Design Methodologies for Mixed Power Integrated Circuits. in: Analog Circuit Design, Kluwer Academic Publishers, Boston, Dordrecht, London, 1998Google Scholar
  38. [593]
    Nakashima, S.; Maeda, Y.; et al. High Voltage CMOS SIMOX Technology and Its Application to a BSH-LSI. High Voltage Integrated Circuits, IEEE Press 1988, S. 327–334Google Scholar
  39. [594]
    Ohashi, H.; Ohura, J.; et al. Improved Dielectrically Isolated Device Integration by Siliconwafer Direct Bonding (SDB) Technique. High Voltage Integrated Circuits, IEEE Press 1988, S. 323–326Google Scholar
  40. [595]
    Reinmuth, K.; Stut, H.; et al. Intelligent Power Modules for Driving Systems. ISPSD 1994 Davos, S. 93–99Google Scholar
  41. [596]
    Reinmuth, K.; Xu, Ch. Experimental Investigation, Simulation and Analyses of Avalanche Effects on Power MOSFETs. PESC 90, San Antonio, Texas, USA Juni 1990, S. 120–125Google Scholar
  42. [597]
    Rischmüller, K.G. Smartpower — Quo Vadis? MADEP-EPE 1991 Florenz, S. 0-420 ff.Google Scholar
  43. [598]
    Robb, S.P.; Sutor, J.L. Recent Advances in Power Integrated Circuits with High Level Integration. ISPSD 1994 Davos, S. 343–348Google Scholar
  44. [599]
    Robb, S.P.; Taomoto, A.A.; et al. Current Sensing in IGBTs for Short Circuit Protection. ISPSD 1994 Davos, S. 81–86Google Scholar
  45. [600]
    Rossi, D. Power MOSFET Driving Circuits and Protection Techniques. in: Smart Power ICs, Springer Verlag, Berlin 2002Google Scholar
  46. [601]
    Sangswang, A. Uncertainty Modeling of Power Electronic Converter Dynamics. Ph.D. Thesis, Drexel University, 2003Google Scholar
  47. [602]
    Sakuma, H.; Kuriyama, T.; et al. A High Voltage Offset-Gate SOS/MOS Transistor. High Voltage Integrated Circuits, IEEE Press 1988, S. 317–320Google Scholar
  48. [603]
    Schröder, D. Simulation of Power Electronic Circuits. Inter. Conf. on Power Electronis (ICPE), Oct. 1998, Seoul, Korea, Proc. of ICPE 98, S. 212–218Google Scholar
  49. [604]
    Seki, Y.; Harada, Y.; et al. A New IGBT with a Monolithic Over-Current Protection Circuit. ISPSD 1994 Davos, S. 31–36Google Scholar
  50. [605]
    Shimizu, Y.; Nakano, Y.; et al. A High Performance Intelligent IGBT with Over-Current Protection. ISPSD 1994 Davos, S. 37–44Google Scholar
  51. [606]
    Shen, Z.; So, K.C.; et al. Comparative Study of Integrated Current Sensors in n-Channel IGBTs. ISPSD 1994 Davos, S. 75–80Google Scholar
  52. [607]
    Stasi, F.J.; Szepesi, T.S. A 5A 100 KHz Monolithic Biopolar DC/DC Converter. EPE 1993 Brighton, S. 201–208Google Scholar
  53. [608]
    Sugawara, Y.; Kamei T.; et al. Practical Size Limits of High Voltage ICs. High Voltage Integrated Circuits, IEEE Press 1988, S. 307–310Google Scholar
  54. [609]
    Sugawara, Y.; Miyata, K.; et al. 350 V Analog-Digital Compatible Power ICs Using Dielectrically Isolated Substrates. High Voltage Integrated Circuits, IEEE Press 1988, S. 311–316Google Scholar
  55. [610]
    Sugawara, Y. Dielectric Isolation Technologies and Power ICs. in: Smart Power ICs, Springer Verlag, Berlin 2002Google Scholar
  56. [611]
    Tanaka, T.; Yasuda, Y.; et al. A New MOS-Gate Bipolar Transistor for Power Switches. High Voltage Integrated Circuits, IEEE Press 1988, S. 187–191Google Scholar
  57. [612]
    Theobald, Th.; Fischer, H.; et al. An Ignition IGBT with Smart Functions in Chip on Chip Technology. International Symposium on Power Semiconductor Devices and IC’s, Osaka, Japan, June 2001Google Scholar
  58. [613]
    Tihayi, J. Smart Discrete Technologies. in: Smart Power ICs, Springer Verlag, Berlin 2002Google Scholar
  59. [614]
    Tihanyi, J.; Koroncai, A. Schaltungsanordnung zum Erfassen des Laststroms eines Leistungs-Halbleiterbauelementes mit sourceseitiger Last. Deutsches Patentamt, DE 19520735Google Scholar
  60. [615]
    Toshihiro, N.; Shigekazu, Y.; et al. New Intelligent Power Module for Electric Vehicles. IAS 1995 Orlando, S. 954–958Google Scholar
  61. [616]
    Walko, J. Motorola’s SmartMOS Process Ups Operating Voltage Integration. EE Times, 07.04.2003Google Scholar
  62. [617]
    Weijers, J.; Boekhout, C. Batterieklemme. Offenlegung Europäsches Patentamt, EP0824417Google Scholar
  63. [618]
    Wilson, R. Preparing High-V Devices For SoC Integration. EE Times, 30.01.2003, Online Ausgabe.Google Scholar
  64. [619]
    Wrathall, R.S. The Design of a High Power Solid State Automotive Switch in CMOS-VDMOS Technology. High Voltage Integrated Circuits, IEEE Press 1988, S. 200–204Google Scholar
  65. [620]
    Xu, Ch.; Schröder, D. Modelling and Simulation of Power MOSFETs and Power Diodes. PESC 88, Kyoto, Japan, April 1988, S. 76–83Google Scholar
  66. [621]
    Xu, Ch.; Schröder, D. A Unified Model for the Power MOSFET Including the Inverse Diode and the Parasitic Bipolar Transistor. EPE 89, Aachen, Oktober 1989, S. 139–143Google Scholar
  67. [622]
    Xu, Ch.; Sander, R.; et al. 4 mΘ Smart-Power Highside Schalter mit Strom-Sense. 17. Tagung „Elektronik im Kraftfahrzeug“, München, Germany, June 1997Google Scholar
  68. [623]
    Xu, Ch. Systematic Design of Smart Power Devices. 2nd International Power Electronics and Motion Control Conference, Hangzhou, China, November 1999Google Scholar
  69. [624]
    Xu, Ch. Models for High-Voltage Transistors in a Standard CMOS Process. EE Times, 31.01.2003, Online AusgabeGoogle Scholar
  70. [625]
    Yamada, T.; Majumdar, G.; et al. Next Generation of Power Modules — An Evolutionary Change from Discrete Semiconductors to System Semiconductors. ISPSD 1994 Davos, S. 3–8Google Scholar
  71. [626]
    Zambrano, R. Improved Structures for Power MOSFETs with On-Chip Full Protection. EPE 1993 Brighton, S. 1–4Google Scholar
  72. [627]
    Zaremba, D.; Mansmann, J. Power Integrated Circuit Makes Board Level Overvoltage and Overtemperature Protection Simple and Inexpensive. High Voltage Integrated Circuits, IEEE Press 1988, S. 211–217Google Scholar
  73. [628]
    Zitta, H. Smart Power Circuits for Power Switches including Diagnostic Functions. in: Analog Circuit Design, Kluwer Academic Publishers, Boston/Dordrecht/London, 1998Google Scholar
  74. [629]
    Zommer, N.D. The Monolithic HV BICMOS. Proc. Int. Electron Device Meeting (1981), S. 263–266Google Scholar

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Authors and Affiliations

  • C. Xu
    • 1
  1. 1.Universität des SaarlandesSaarbrücken

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