Abstract
We have used the perturbed angular correlation (PAC) method and extended X-ray absorption fine structure spectroscopy (EXAFS), along with microscopic methods to investigate the implantation induced disorder and characterize the ion-induced amorphisation of elemental and compound semiconductors.
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References
Hobler G. and Otto G., Status and open problems in modeling of as-implanted damange in Si, Mater. Sci. Semicond. Process. 6 (2003), 1.
Wichert T., Hyperfine Interact. 97–98 (1996), 135.
Bezakova E. et al., Appl. Phys. Lett. 75 (1999), 1923.
Sayers D. E. and Bunker B. A., In: Koningsberger D. C. and Prins R. (eds.), X-ray Absorption: Principles, Applications and Techniques of EXAFS, SEXAFS and XANES, Wiley, New York, 1988, p. 211.
Glover C. J. et al., Appl. Phys. Lett. 74 (1999), 1713.
Glover C. J. et al., Nucl. Instrum. Methods B161–163 (2000), 1033.
Ridgway M. C., Glover C. J., Foran G. J. and Yu K. M., J. Appl. Phys. 83 (1998), 4610.
Glover C. J. et al., Phys. Rev., B 63 (2001), 073294.
de Azevedo G. M. et al., Nucl. Instrum. Methods B190 (2002), 851.
Glover C. J., Foran G. J. and Ridgway M. C., Nucl. Instrum. Methods B199 (2003), 199.
de Azevedo G. M. et al., Phys. Rev., B B68 (2003), 115204.
Ridgway M. C., Byrne A. P., Bezakova E., Wehner M. and Vianden R., In: Jagadish C. (ed.), Proc. 1996 OEMMD Conf., (IEEE, Piscataway), 1997.
Glover C. J., Byrne A. P. and Ridgway M. C., Nucl. Instrum. Methods B175–177 (2001), 51.
Feuser U., Vianden R. and Pasquevich A. F., Hyperfine Interact. 60 (1990), 829.
Haesslein H., Sielemann R. and Zistl C., Phys. Rev. Lett. 80 (1998), 262.
da Silva A. J. R. et al., Phys. Rev., B B62 (2000), 9903.
Höhler H., Atodiresei N., Schroeder K., Zeller R. and Dederichs P. H., Phys. Rev., B B (2004) cond-mat/0406616 and Hyperfine Interact. This meeting.
Glover C. J. et al., J. Synchrotron Radiat. 84610 (2001), 773.
Morehead F. F. and Crowder R. L., Radiat. Eff. 6 (1970), 27.
Gibbons J. F., Proc. IEEE 60 (1972), 1062.
Campisano S. U. et al., Nucl. Instrum. Methods B80/81 (1993), 514.
Hecking N., Heidemann K. F., and Te Kaat E., Nucl. Instrum. Methods B15 (1986), 760.
Nord J., Nordland K., and Keinonen J., Nucl. Instrum. Methods B193 (2002), 294.
Mousseau N. and Barkema G. T., Phys. Rev., B 61 (2000), 1898.
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Byrne, A.P., Ridgway, M.C., Glover, C.J., Bezakova, E. (2005). Comparative Studies Using EXAFS and PAC of Lattice Damage in Semiconductors. In: Maier, K., Vianden, R. (eds) HFI/NQI 2004. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-30924-1_39
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DOI: https://doi.org/10.1007/3-540-30924-1_39
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