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From Quantum Models to Novel Effects to New Applications: Theory of Nanotube Devices

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Applied Physics of Carbon Nanotubes

Part of the book series: NanoScience and Technology ((NANO))

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Abstract

Classical and quantum effects in the physics of nanotube devices are presented. In particular, weak screening in one—dimensional systems is shown to essentially modify textbook theory of field—effect devices and lead to an interesting dependence of the device characteristics on geometrical factors. The capacitance of a nanoscale device has two main components: a classical geometric capacitance and a quantum term. The latter is related to a finite density of states of the nanosystem. Derivation of this density of states in the presence of external perturbations is a difficult task. We present some examples of the modification of the nanotube bandstructure by external perturbations. Electric fields can be used for band gap engineering in nanotubes, which may be translated into the device function. The concept of the Metallic Field—Effect Transistor is proposed. This device shows, at least theoretically, metallic conductance in the ON state and insulating behavior in the OFF state, which may be important for applications.

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  1. S.V. Rotkin
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Editors and Affiliations

  1. Department of Physics, Lehigh University, 16 Memorial Drive East, Bethlehem, PA, 18015, USA

    Slava V. Rotkin

  2. Experimental Station, DuPont Company, Wilmington, DE, 19880-0228, USA

    Shekhar Subramoney

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Rotkin, S. (2005). From Quantum Models to Novel Effects to New Applications: Theory of Nanotube Devices. In: Rotkin, S.V., Subramoney, S. (eds) Applied Physics of Carbon Nanotubes. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-28075-8_1

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