Low g Inertial Sensor based on High Aspect Ratio MEMS

Abstract

This paper is presenting a new single axis low g inertial sensor based on a High Aspect Ratio MEMS (HARMEMS) transducer combined with a 0.25μm SmartMOS™ mixed signal ASIC into a single Quad Flat No leaded 16 pin package (QFN). The high logic gate density digital signal processing (DSP) is used for filtering, trim and data formatting while the associated non volatile memory contains the device settings. The micro-machined transducer features an overdamped mechanical response and a high signal to noise ratio. This makes this device ideal for use in Vehicle Stability Control (VSC) or Electrical Parking Brake (EPB) applications where high sensitivity and small zero-g acceleration output error is required.