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Progress in Nano-Electro-Optics IV pp 43–82Cite as

Improvement of Interface Quality in Cleaved-Edge-Overgrowth GaAs Quantum Wires Based on Micro-optical Characterization

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  1. Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa Chiba, 277-8581, Japan

    Masahiro Yoshita & Hidefumi Akiyama

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  1. Masahiro Yoshita
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  2. Hidefumi Akiyama
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  1. Department of Electronics Engineering School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan

    Motoichi Ohtsu

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Yoshita, M., Akiyama, H. (2005). Improvement of Interface Quality in Cleaved-Edge-Overgrowth GaAs Quantum Wires Based on Micro-optical Characterization. In: Ohtsu, M. (eds) Progress in Nano-Electro-Optics IV. Springer Series in Optical Sciences, vol 109. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-27308-5_2

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