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Effect of Quantum Confinement on Electrons and Phonons in Semiconductors

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Fundamentals of Semiconductors

Part of the book series: Graduate Texts in Physics ((GTP))

Summary

In this chapter we studied the effect of quantum confinement on electrons and phonons in semiconductors in synthetic layered structures, known as quantum wells and superlattices, that are usually fabricated with the technique of molecular beam epitaxy. Due to limited space, we have considered mainly the most studied systems composed of lattice-matched GaAs, AlAs and their alloys. However, this system is versatile enough to demonstrate much of the physics involved, such as formation of electronic subbands and minibands, the confinement of optical phonons, folding of acoustic phonons and the introduction of interface modes. We also illustrated the effect of confinement on the transport properties of carriers in these materials by studying the phenomena of resonant tunneling and the integral quantum Hall effect. The fractional quantum Hall effect has become one of the most exciting areas of current research.

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Authors and Affiliations

  1. Department of Physics, University of California, CA, 94720-7300, Berkeley, USA

    Professor Dr. Peter Y. Yu

  2. Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569, Stuttgart, Germany

    Professor Dr., Dres. h.c. Manuel Cardona

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  1. Professor Dr. Peter Y. Yu
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Yu, P.Y., Cardona, M. (1996). Effect of Quantum Confinement on Electrons and Phonons in Semiconductors. In: Fundamentals of Semiconductors. Graduate Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-26475-2_9

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  • DOI: https://doi.org/10.1007/3-540-26475-2_9

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