Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
G. Wilk, R.W. Wallace and J.M Anthony, J. Appl. Physics 89, 5243 (2001)
G. Lucovsky, in Extended Abstracts of the 6th Workshop on Formation, Characterization, and Reliability of Ultrathin Silicon Oxides, January 26–27, 2001, Atagawa Heights, Japan, p. 5
D.E. Aspnes and J.B. Theeten, J. Electrochem. Soc. 127, 1359 (1980)
D.E. Aspnes et al., Phys. Rev. Lett. 43, 1046 (1979)
J.W. Keister, J.E. Rowe, J.J. Kolodziej, H. Niimi, H.S. Tao, T.E. Madey and G. Lucovsky, J. Vac. Sci. Technol. A 17, 1250 (1999)
M.D. Ulrich, J.G. Hong, J.E. Rowe, G. Lucovsky, A.-Y. Chan and T.E. Madey, J. Vac. Sci. Technol. B 21, 1777 (2003)
G. Lucovsky and J.C. Phillips, Appl. Phys. A — Materials & Processing 78, 453 (2004)
P. Boolchand, in Insulating and Semiconducting Glasses (World Scientific, Singapore, 2000), p. 191
P. Boolchand, D.G. Georgiev and M. Micoulaut, J. Optoelectronics and Adv. Mater. 4, 823 (2002)
G. Lucovsky and J.C. Phillips, J. Vac. Sci. Technol. B 22 (2004) (in press); G. Lucovsky, J.P. Maria and J.C. Phillips, J. Vac. Sci. Technol. B 22 (2004) (in press)
R. Zallen, The Physics of Amorphous Solids (John Wiley and Sons, New York, 1983), Chap. 2
F.L. Galeener and G. Lucovsky, Phys. Rev. Lett. 37, 1474 (1976)
R.J. Bell and P. Dean, Discuss Faraday Soc 50, 55 (1970); in Amorphous Materials, edited by R.W. Douglas (Wiley-Interscience, London, 1972), p. 443
J.C. Phillips, J. Non-Cryst. Solids 34, 153 (1979)
J.C. Phillips, J. Non-Cryst. Solids 43, 37 (1981)
J.L. Whitten, Y. Zhang, M. Menon, and G. Lucovsky, J. Vac. Sci. Techol. B 20, 1710 (2002)
D.L. Griscom in The Physics of SiO2 and Its Interfaces, ed. by S.T. Pantelides (Pergammon Press, New York, 1978), p. 232
R.L. Mozzi and B.E. Warren, J. Appl. Cryst. 2, 164 (1969)
L. Robertson and S. Moss, J. Non-Crystalline Solids 106, 330 (1988)
G. Lucovsky, L.S. Sremaniak, T. Mowrer T and J.L. Whitten, J. Non-Cryst. Solids 326, 1, (2003)
R.B. Laughlin and J.D. Joannopoulos, Phys. Rev. B 16, 2942 (1977)
D.J. Chadi, R.B. Laughlin and J.D. Joannopoulos, in [11.7], p. 55
I.P. Batra, in [11.17], p. 65
S.T. Pantelides and W.A. Harrison, Phys. Rev. B 13, 2667 (1976)
A.G. Revesz and G.V. Gibbs, in The Physics of MOS Insulators, edited by G. Lucovsky, S.T. Pantelides and F.L. Galeener (Pergamon Press, New York, 1980), p. 92
G. Lucovsky and H. Yang, J. Vac. Sci. Tech. A 15, 836, (1997)
J.L. Whitten and H. Yang, Int. J. Quantum Chem., Quantum Chem. Symp. 29, 41 (1995)
J.L. Whitten and H. Yang, Surf. Sci. Rep. 24, 55 (1996)
J.L. Whitten and M. Hackmeyer, J. Chem. Phys. 51, 5584 (1969)
J. Neufeind and K.-D. Liss, Bur. Bunsen Phys. Chem. 100, 1341 (1996)
H.R. Philipp, Solid State Commun. 44, 73 (1966)
S.T. Pantelides, in [11.17], p. 80
C. Senemaud and M.T. Costa Lima, in [11.9], p.85
T.H. DiStefano, in [11.9], p. 362
G. Lucovsky G, IBM J. Res. and Develop. 43, 301 (1999) 301, and references therein
G. Lucovsky, H. Yang, H. Niimi, J.W. Keister, J.E. Rowe, M.F. Thorpe and J.C. Phillips, J. Vac. Sci. Technol. B 18, 1742 (2000)
F.J. Himpsel, F.R. McFeely, A. Taleb-Ibrahimi, Y.A. Yarmoff and G. Hollinger, Phys. Rev. B 38, 6084 (1988)
J.W. Keister, J.E. Rowe, Y.-M. Lee, H. Niimi, G. Lucovsky and G.J. Lapeyre, unpublished
H. Yang, H. Niimi, J.W. Keister, G. Lucovsky and J.E. Rowe, IEEE Electron Device Lett. 21, 76 (2000)
D.R. Lee, G. Lucovsky, M.R. Denker and C. Magee, J. Vac. Sci. Technol. A 13, 1671 (1995)
H. Niimi and G. Lucovsky, J. Vac. Sci. Technol. A 17, 3185 (1999); B 17, 2610 (1999)
M. Weldon, K.T. Queeny, Y.J. Chabal, B. Stefanov and K. Raghavachai, J. Vac. Sci. Technol. B 17, 1795 (1999)
D.E. Muller et al., Nature 399, 758 (1999)
L.C. Feldman, I, Stensgaard, P.J. Silverman and T.E. Jackman, in [11.17], p. 339
G. Lucovsky and J.C. Phillips, J. Non-Cryst. Solids 227, 1221 (1998)
G. Lucovsky, Y. Wu, H. Niimi, V. Misra, and J.C. Phillips, Appl. Phys. Lett. 74, 2005 (1999)
G. Lucovsky, A. Rozaj-Brvar and R.F. Davis, in The Structure of Non-Crystalline Materials 1982, edited by P.H. Gaskell, J.M. Parker and E.A. Davis (Taylor and Francis, London, 1983), p. 193
B. Rayner, H. Niimi, R. Johnson, R. Therrien, G. Lucovsky and F.L. Galeener, AIP Conf. Proc. 550, 149 (2001)
G.B. Rayner Jr., D. Kang, Y. Zhang and G. Lucovsky, J. Vac. Sci. Technol. B 20, 1748 (2002)
J.C. Phillips and X. Kerner, Solid State Commun. 117, 47 (2001)
L. Pauling, The Nature of the Chemical Bond, 3rd edn (Cornell University Press, Ithaca, NY. 1936)
R.T. Sanderson, Chemical Bonds and Bond Energy (Academic Press, New York 1971)
H.B. Gray, Electrons and Chemical Bonding (W.A. Benjamin, New York, 1962), Chap. 9
C.J. Ballhausen and H.B. Gray, Molecular Orbital Theory (W.A. Benjamin, New York, 1964), Chap. 8
P.A. Cox. Transition Metal Oxides (Oxford Science Publications, Oxford, 1992)
L.A. Grunes, R.D. Leapman, C.D. Walker, R. Hoffman and A.B. Kunz, Phys. Rev. B 25, 7157 (1982)
Y. Zhang, unpublished
J. Robertson and C.W. Chen, Appl. Phys. Lett. 74, 1164 (1999)
J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000)
G. Lucovsky, Microelectronic Reliability 43, 1417 (2003)
R.S. Johnson, G. Lucovsky and J. Hong, J. Vac. Sci. Technol. A 19, 1353 (2001)
R.S. Johnson, G. Lucovsky and J. Hong, J. Vac. Sci. Technol. B 19, 1606 (2001)
R.S. Johnson, G. Lucovsky and J.G. Hong, Microelectronic Engineering 59, 385 (2001)
G. Lucovsky, G.B. Rayner Jr., D. Kang, G. Appel, R.S. Johnson, Y. Zhang, D.E. Sayers, H. Ade and J.L. Whitten, Appl. Phys. Lett. 79, 1775 (2001)
G. Lucovsky, Y. Zhang, G.B. Rayner Jr. et al., J. Vac. Sci. Technol. B 20, 1739 (2002)
C.C. Fulton (unpublished)
G.B. Rayner, D. Kang and G. Lucovsky, J. Vac. Sci. Technol. B 21, 1783 (2003)
S. Miyazaki, M. Narasak, M. Ogasawaga and M. Hirose, Microelectronic Engineering 59, 373 (2001)
D.E. Raymaker, J.S. Murday, N.H. Turner, C. Moore and M.G. Legally, in [11.9], p. 99
S. Miyazaki and M. Hirose, AIP Conf. Proc. 550, 89 (2000)
J.G. Hong, PhD. Dissertation, North Carolina State University (2004)
N.A. Stoute, G. Lucovsky and D.E. Aspnes (unpublished)
H. Sato, T. Nango, T. Miyagawa, T. Katagiri, K.S. Seol and Y. Ohki, J. Appl. Phys. 92, 1106 (2002)
C.L. Hinkle, J.G. Hong and G. Lucovsky, Microelectronic Engineering 72, 257 (2004)
W. Franz, Handbuch der Physik, Vol. XVIII, ed. by S. Flugge (Springer, Berlin 1965) p. 155
J. Maserjian, J. Vac. Sci. Tech. 11, 996 (1974)
K.F. Schuegraf, C.C. King and C.-M. Hu, 1992 VLSI Symposium
H-Y. Yang, H. Niimi and G. Lucovsky, J. Appl. Phys. 83, 2327 (1998)
E.M. Vogel et al., IEEE Trans. Elec. Dev. 45, 1350 (1998)
H. Yang and G. Lucovsky, IEEE-IEDM Digest, p. 245 (1999)
I. Kim, S. Han, J.G. Hong, C. Osburn and G. Lucovsky (unpublished)
H.H. Osten et al., in Extended Abstracts International Workshop on Gate Insulator, Nov. 1–2 2001, Tokyo, p. 100
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2005 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Lucovsky, G., Whitten, J. (2005). Electronic Structure of Alternative High-k Dielectrics. In: Huff, H., Gilmer, D. (eds) High Dielectric Constant Materials. Springer Series in Advanced Microelectronics, vol 16. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-26462-0_11
Download citation
DOI: https://doi.org/10.1007/3-540-26462-0_11
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-21081-8
Online ISBN: 978-3-540-26462-0
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)