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Negative magnetoresistance and Anderson localization in Si-MOSFETs and other 2D systems in semiconductor interfaces

  • Localization in 2D Systems
  • Conference paper
  • First Online:
Application of High Magnetic Fields in Semiconductor Physics

Part of the book series: Lecture Notes in Physics ((LNP,volume 177))

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Author information

Authors and Affiliations

  1. Department of Physics, Gakushuin University, Mejiro, Toshima-ku, Tokyo, Japan

    S. Kawaji

  2. Gakushuin Women's Junior College, Toyama, Shinjuku-ku, Tokyo, Japan

    Y. Kawaguchi

Authors
  1. S. Kawaji
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  2. Y. Kawaguchi
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Editor information

G. Landwehr

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© 1983 Springer-Verlag

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Kawaji, S., Kawaguchi, Y. (1983). Negative magnetoresistance and Anderson localization in Si-MOSFETs and other 2D systems in semiconductor interfaces. In: Landwehr, G. (eds) Application of High Magnetic Fields in Semiconductor Physics. Lecture Notes in Physics, vol 177. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11996-5_9

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  • DOI: https://doi.org/10.1007/3-540-11996-5_9

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11996-8

  • Online ISBN: 978-3-540-39472-3

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