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Temperature dependence of the quantum hall effect in In0.53Ga0.47As-InP heterojunctions

  • Quantized Hall Effect
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Application of High Magnetic Fields in Semiconductor Physics

Part of the book series: Lecture Notes in Physics ((LNP,volume 177))

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Abstract

We have studied the temperature dependence of the quantum Hall effect in modulation-doped InGaAs-InP heterojunctions from 4.2 K to 50 mK. The results are briefly discussed in terms of electron localisation.

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Author information

Authors and Affiliations

  1. Laboratoire central de recherches, THOMSON-CSF, 91401, Orsay, France

    J. P. Hirtz & M. Razeghi

  2. Laboratoire associé au CNRS - 24, Groupe de Physique des Solides de l'E.N.S., 75005, rue Lhomond, Paris

    Y. Guldner, J. P. Vieren, P. Voisin & M. Voos

  3. C.R.T.B.T. and S.N.C.I., CNRS, 38042, Grenoble

    A. Briggs

Authors
  1. J. P. Hirtz
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  2. Y. Guldner
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  3. A. Briggs
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  4. J. P. Vieren
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  5. P. Voisin
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  6. M. Voos
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  7. M. Razeghi
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Editor information

G. Landwehr

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© 1983 Springer-Verlag

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Hirtz, J.P. et al. (1983). Temperature dependence of the quantum hall effect in In0.53Ga0.47As-InP heterojunctions. In: Landwehr, G. (eds) Application of High Magnetic Fields in Semiconductor Physics. Lecture Notes in Physics, vol 177. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11996-5_6

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  • DOI: https://doi.org/10.1007/3-540-11996-5_6

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11996-8

  • Online ISBN: 978-3-540-39472-3

  • eBook Packages: Springer Book Archive

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