Abstract
The chemical shifts of the is-2p Zeeman transitions between donor states in n-GaAs and n-InP have been studied in samples from numerous sources. In the best samples of InP eleven separate peaks were observed. The approximate locations of the S and Si components have been established using backdoped samples. The only radically different set of residual donors in InP is produced by bulk growth.
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R.F.Kirkman, D.Phil. Thesis, 1975 (Univ. of Oxford).
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© 1983 Springer-Verlag
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Armistead, C.J. et al. (1983). Identification of contaminating donors in III–V compounds by far-infrared laser magneto-optical studies. In: Landwehr, G. (eds) Application of High Magnetic Fields in Semiconductor Physics. Lecture Notes in Physics, vol 177. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11996-5_39
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DOI: https://doi.org/10.1007/3-540-11996-5_39
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