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Identification of contaminating donors in III–V compounds by far-infrared laser magneto-optical studies

  • Magneto-Optics in 3D-Systems, Except InSb
  • Conference paper
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Application of High Magnetic Fields in Semiconductor Physics

Part of the book series: Lecture Notes in Physics ((LNP,volume 177))

Abstract

The chemical shifts of the is-2p Zeeman transitions between donor states in n-GaAs and n-InP have been studied in samples from numerous sources. In the best samples of InP eleven separate peaks were observed. The approximate locations of the S and Si components have been established using backdoped samples. The only radically different set of residual donors in InP is produced by bulk growth.

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References

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G. Landwehr

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© 1983 Springer-Verlag

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Armistead, C.J. et al. (1983). Identification of contaminating donors in III–V compounds by far-infrared laser magneto-optical studies. In: Landwehr, G. (eds) Application of High Magnetic Fields in Semiconductor Physics. Lecture Notes in Physics, vol 177. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11996-5_39

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  • DOI: https://doi.org/10.1007/3-540-11996-5_39

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11996-8

  • Online ISBN: 978-3-540-39472-3

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