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Faraday rotation and ellipticity in electron inversion layers of Si MOS structures

  • Magneto-Optics and Electronic Structure of 2D-Systems
  • Conference paper
  • First Online:
Application of High Magnetic Fields in Semiconductor Physics

Part of the book series: Lecture Notes in Physics ((LNP,volume 177))

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Abstract

We report the first observation of Faraday rotation and ellipticity in the two-dimensional electron gas in the surface of p-type (100) Si. 2The surface densities were varied between 1.06x1012 and 2.3x1012cm−2. The Faraday rotation changes sign and the ellipticity has a maximum at the cyclotron resonance magnetic field. Both the density dependence of the mass enhancement and the magnetic field dependence of the relaxation time were observed in the Faraday rotation. From the data measured near cyclotron resonance we obtained an effective mass m = 0.19 m and a relaxation time of 6x10s for a surface density of 2.3x1012ecm−2.

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References

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Authors and Affiliations

  1. Department of Physics and Astronomy, Louisiana State University, 70803, Baton Rouge, Louisiana, USA

    H. Piller

  2. Naval Research Laboratory, 20375, Washington, D.C., USA

    R. J. Wagner

Authors
  1. H. Piller
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  2. R. J. Wagner
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Editor information

G. Landwehr

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© 1983 Springer-Verlag

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Piller, H., Wagner, R.J. (1983). Faraday rotation and ellipticity in electron inversion layers of Si MOS structures. In: Landwehr, G. (eds) Application of High Magnetic Fields in Semiconductor Physics. Lecture Notes in Physics, vol 177. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11996-5_27

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  • DOI: https://doi.org/10.1007/3-540-11996-5_27

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11996-8

  • Online ISBN: 978-3-540-39472-3

  • eBook Packages: Springer Book Archive

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