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Anomalous cyclotron resonance of 2D electrons in AlxGa1−xAs/GaAs heterojunctions

  • Magneto-Optics and Electronic Structure of 2D-Systems
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Application of High Magnetic Fields in Semiconductor Physics

Part of the book series: Lecture Notes in Physics ((LNP,volume 177))

Abstract

Far-infrared cyclotron resonance of a two-dimensional electron gas in A1xGa1-xAs/GaAs heterjunction interfaces has been studied at various electron densities achieved by changing the gate voltage. In the quantum limit, an anomalous shift of mass and line-width change has been observed at low electron densities and low temperatures. The data are discussed in conjunction with previous Si-MOS results in the framework of existing theories.

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Authors and Affiliations

  1. Department of Material Physics, Faculty of Engineering Science, Osaka University, 560, Toyonaka, Osaka, Japan

    S. Narita, K. Muro & S. Mori

  2. Fujitsu Laboratories Ltd., 1015, Kamikodanaka, Nakahara, 211, Kawasaki, Japan

    S. Hiyamizu & K. Nanbu

Authors
  1. S. Narita
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  2. K. Muro
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  3. S. Mori
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  4. S. Hiyamizu
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  5. K. Nanbu
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Editor information

G. Landwehr

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© 1983 Springer-Verlag

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Narita, S., Muro, K., Mori, S., Hiyamizu, S., Nanbu, K. (1983). Anomalous cyclotron resonance of 2D electrons in AlxGa1−xAs/GaAs heterojunctions. In: Landwehr, G. (eds) Application of High Magnetic Fields in Semiconductor Physics. Lecture Notes in Physics, vol 177. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11996-5_26

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  • DOI: https://doi.org/10.1007/3-540-11996-5_26

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11996-8

  • Online ISBN: 978-3-540-39472-3

  • eBook Packages: Springer Book Archive

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