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Localisation and scaling of resistance of disordered systems including magnetic field effects

  • Localization in 2D Systems
  • Conference paper
  • First Online:
Application of High Magnetic Fields in Semiconductor Physics

Part of the book series: Lecture Notes in Physics ((LNP,volume 177))

Abstract

The concept of localisation is briefly reviewed with special emphasis on the scaling properties of the conductance. The influence of a magnetic field is discussed. Numerical results for the localisation length in two- and three-dimensional systems are reported. It is found that it obeys a one-parameter scaling law, which depends on the dimensionality, and which allows conclusions on the temperature dependence of the resistance. The influence of a magnetic field on localisation is studied with the same numerical procedure as in the case of zero magnetic field. The localisation length is found to obey a two parameter scaling law. A negative magnetoresistance is obtained. Evidence is presented that even for strong magnetic field all quantum states remain localised. An interpretation of recent high field magnetotransport data obtained from inversion layers is attempted.

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Author information

Authors and Affiliations

  1. Universität Heidelberg Institut für Theoretische Physik, Philosophenweg 19, D-6900, Heidelberg, Germany

    A. MacKinnon

  2. Physikalisch-Technische Bundesanstalt, Bundesallee 100, D-3300, Braunschweig, Germany

    B. Kramer

Authors
  1. A. MacKinnon
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  2. B. Kramer
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G. Landwehr

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© 1983 Springer-Verlag

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MacKinnon, A., Kramer, B. (1983). Localisation and scaling of resistance of disordered systems including magnetic field effects. In: Landwehr, G. (eds) Application of High Magnetic Fields in Semiconductor Physics. Lecture Notes in Physics, vol 177. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11996-5_12

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  • DOI: https://doi.org/10.1007/3-540-11996-5_12

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11996-8

  • Online ISBN: 978-3-540-39472-3

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