Abstract
The galvanomagnetic properties of p-type inversion layers in germanium bicrystals were studied at helium temperatures T in high magnetic fields B up to 20 Tesla. A logarithmic correction of conductivity and Hall-coefficient together with a positive magneto-resistance ∞ In B in the parallel and transverse configuration suggests the existence of electron-electron interaction effects. The scaling of the magneto-resistance with B/T can be explained with Zeeman splitting of the energy levels.
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Uchida, S., Landwehr, G. (1983). Electron-electron interaction effects in p-type germanium inversion layers. In: Landwehr, G. (eds) Application of High Magnetic Fields in Semiconductor Physics. Lecture Notes in Physics, vol 177. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11996-5_10
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DOI: https://doi.org/10.1007/3-540-11996-5_10
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