Abstract
Analysing the radiation effects in various I-S and MIS structures three characteristic regions can be distinguished in the general case: a) the insulator layer adjacent to the interface; b) the corresponding interface; c) a thin layer of the semiconductor, adjacent to the interface. Main mechanisms which determine formation of radiation induced defects are: 1) diffusion and drift motion of point (primary) defects and high mobility contaminations from the bulk with subsequent complexing (or accumulation) near or at the interface, predominantly on the more damaged part of it,and 2) electron stimulated photo-chemical reaction causing formation of centers.
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Litovchenko, V.G. (1983). Radiation defects of the semiconductor-insulator interface. In: Giber, J., Beleznay, F., Szép, I.C., László, J. (eds) Defect Complexes in Semiconductor Structures. Lecture Notes in Physics, vol 175. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11986-8_23
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DOI: https://doi.org/10.1007/3-540-11986-8_23
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