Abstract
The transitional layer in heterostructure is associated with the very serious problem of the lattice mismatch dislocation. A conventional method to overcome this problem is the application of different kinds of buffer layers between the epitaxial layer and the substrate, and on the other hand, the use of substrates for the epitaxy with nearly the same lattice constant and thermal expansion coefficient. Another important question is the deviation of the composition of the compound crystal from the stoichiometric one, because these deviations correspond to different kinds of defects and reduce the radiative efficiency, promote the propagation of dislocations and change the lattice constant even if the composition throughout the mixed crystal is the same. Therefore the lattice mismatch dislocation can be minimized by both, adjustment of the composition of the mixed crystal and controlling the deviation from the stoichiometric composition.
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© 1983 Springer-Verlag
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Nishizawa, Ji., Koike, M. (1983). Compositional transition layers in heterostructure. In: Giber, J., Beleznay, F., Szép, I.C., László, J. (eds) Defect Complexes in Semiconductor Structures. Lecture Notes in Physics, vol 175. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11986-8_16
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DOI: https://doi.org/10.1007/3-540-11986-8_16
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