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Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon

  • Part III. Defects in Silicon
  • Conference paper
  • First Online:
Defect Complexes in Semiconductor Structures

Part of the book series: Lecture Notes in Physics ((LNP,volume 175))

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References

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Author information

Authors and Affiliations

  1. Institut für Physik der Werkstoffbearbeitung Berlin, Akademie der Wissenschaften der DDR, Seestraße 82, DDR-1166, Berlin-Rahnsdorf

    F. -G. Kirscht, P. Gaworzewski, K. Schmalz, I. Babanskaja, P. Zaumseil & U. Winter

Authors
  1. F. -G. Kirscht
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  2. P. Gaworzewski
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  3. K. Schmalz
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  4. I. Babanskaja
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  5. P. Zaumseil
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  6. U. Winter
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Editor information

J. Giber F. Beleznay I. C. Szép J. László

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© 1983 Springer-Verlag

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Kirscht, F.G., Gaworzewski, P., Schmalz, K., Babanskaja, I., Zaumseil, P., Winter, U. (1983). Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon. In: Giber, J., Beleznay, F., Szép, I.C., László, J. (eds) Defect Complexes in Semiconductor Structures. Lecture Notes in Physics, vol 175. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11986-8_12

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  • DOI: https://doi.org/10.1007/3-540-11986-8_12

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11986-9

  • Online ISBN: 978-3-540-39456-3

  • eBook Packages: Springer Book Archive

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