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Abbreviations
- α fc, α out :
-
Free carrier absorption coefficient and absorption coefficient in passive regions, respectively [cm−1]
- αj :
-
Diode constant
- β s :
-
Constant in gain relation with current density
- Γ:
-
Fraction of wave intensity inside the active region
- Δn:
-
Refractive index step at heterojunction
- η c :
-
Coupling efficiency of diode into fiber
- η ext :
-
Differential external quantum efficiency (laser)
- η i :
-
Internal quantum efficiency η p
- η p :
-
Power efficiency
- θ ⊥,θ | :
-
Beam width at half-intensity in the directions perpendicular and parallel to the junction plane
- λ, λL :
-
Emission wavelength
- τ:
-
Minority carrier lifetime
- τ r :
-
Radiative lifetime
- τ nr :
-
Nonradiatlve lifetime
- τ laser :
-
Operating time for 20%, laser threshold current increase
- τ LED :
-
Operating time for a 50% output reduction from an LED
- a o :
-
Lattice constant (Δa o/α o is the misfit strain)
- b:
-
Exponent in gain relation with current density
- B r :
-
Recombination coefficient [cm3 s−1]
- d:
-
Active region thickness
- e:
-
Electron charge
- E g :
-
Bandgap energy [eV]
- f c :
-
Diode bandwidth
- g:
-
Gain coefficient [cm−1]
- I th :
-
Threshold current [A]
- J th :
-
Threshold current density [A cm−2]
- L:
-
Fabry-Perot cavity length
- N.A.:
-
Numerical aperture of fiber
- N e :
-
Injected electron-hole pair density [cm−3]
- P o :
-
Power emitted
- p o, n o :
-
Equilibrium carrier concentrations in active region (holes, electrons)
- R:
-
Facet reflectivity
- R s :
-
Diode series resistance
- S:
-
Surface recombination velocity [cm s−1]
- T o :
-
Parameter describing temperature dependence of the threshold current (2.12) [K]
- V a :
-
Applied voltage
- W:
-
Stripe width
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Kressel, H., Ettenberg, M., Wittke, J.P., Ladany, I. (1980). Laser diodes and LEDs for fiber optical communication. In: Kressel, H. (eds) Semiconductor Devices for Optical Communication. Topics in Applied Physics, vol 39. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11348-7_24
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