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Physics of Narrow Gap Semiconductors pp 54–58Cite as

THM growth of PbTe

  • 2. Crystal growth and new materials
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Part of the book series: Lecture Notes in Physics ((LNP,volume 152))

Abstract

The growth of PbTe with the THM method is briefly described, both Te and Pb have been used as a solvent. Results on concentration, mobility and band gap obtained on n type, as grown or annealed materials are presented.

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Author information

Authors and Affiliations

  1. Laboratoire de Physique des Solides C.N.R.S., 92190, Meudon, France

    R. Triboulet & G. Didier

  2. Département de Génie Physique I.N.S.A., 35043, Rennes Cedex, France

    A. Lasbley, F. Morales, B. Toulouse, C. M. Pelletier, R. Granger & S. Rolland

Authors
  1. R. Triboulet
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  2. G. Didier
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  3. A. Lasbley
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  4. F. Morales
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  5. B. Toulouse
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  6. C. M. Pelletier
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  7. R. Granger
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  8. S. Rolland
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Editor information

E. Gornik H. Heinrich L. Palmetshofer

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© 1982 Springer-Verlag

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Triboulet, R. et al. (1982). THM growth of PbTe. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_7

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  • DOI: https://doi.org/10.1007/3-540-11191-3_7

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11191-7

  • Online ISBN: 978-3-540-38978-1

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